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Controllable tuning of electron–phonon coupling strength and excited state dynamics is important for the understanding of resonance Raman scattering in low-dimensional semiconductors. Here, we report a significant and reversible field-induced modulation in absolute resonance Raman intensity of quantum dots using ionic liquid gating. Meanwhile, a potential-dependent nonlinear relationship is present between Raman intensity and excitation power density. By exploring the parameter space within a time domain model, we find that the Raman intensity variation is mainly determined by the homogeneous linewidth. We further propose that the Fermi level positions and exciton species play key roles in the excited state decay rates.

InxGa1−xAsyP1−y epilayers have been grown by low-pressure metalorganic vapor phase epitaxy (LPMOVPE) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) as group V precursors and nitrogen as the carrier gas. Arsenic incorporation into InxGa1−xAsyP1−y films grown by LPMOVPE as a function of the gas phase composition ratio and V/III ratio has been systematically studied. With optimized growth conditions, the arsenic composition of the epilayers does not change linearly with the TBA source flow. It is observed that the arsenic incorporation becomes saturated when the gas phase composition TBA/(TBA+TBP) increases to 0.4. The incorporation kinetics in MOVPE growth of InxGa1−xAsyP1−y alloy has been analyzed by using an adsorption-trapping model. The As composition (y) of the InxGa1−xAsyP1−y films varies with the TBA gas phase composition ξ=TBA/(TBA+TBP) according to the expression y=2Ns*/aN0(1−e−θβξ). It is demonstrated that with the optimized growth conditions, TBA has a higher incorporation effic...