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The effects of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) doping on diketopyrrolo-pyrrole-based polymeric semiconductors in terms of charge transport behavior and structural ordering are systematically investigated. Although the energy level offset between the polymeric semiconductor and the F4TCNQ acceptor was not particularly large, ultraviolet photoelectron spectroscopy analyses revealed that a low doping ratio of 1 wt. % is sufficient to tune the energy distance between the Fermi level and the HOMO level, reaching saturation at roughly 5 wt. %, which is further confirmed by the depletion mode measurements of field effect transistors (FETs). Structural analyses using grazing-incidence X-ray diffraction (GIXD) show that the overall degree of edge-on orientation is disturbed by the addition of dopants, with significant influence appearing at high doping ratios (>3 wt. %). The calculated charge carrier mobility from accumulation mode measurements of FETs showed a maximum value of 2 cm2/...

Intense pulsed white light (IPWL) sintering was carried out at room temperature, which is suitable dye-sensitized solar cells (DSSCs) fabrication process on plastic substrates for the mass production. Five seconds irradiation of IPWL on TiO2 electrode significantly improves the photocurrent density and power conversion efficiency of DSSCs by more than 110% and 115%, respectively, compared to the DSSCs without IPWL treatment. These improvements were mainly attributed to the enhanced interconnection between the TiO2 nanoparticles induced by IPWL illumination, which is confirmed by the impedance spectra analysis.