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Amorphous Zn1−xMgxO (α-Zn1−xMgxO) ternary alloy thin films across the full compositional range were synthesized by a low-cost sol-gel method on quartz substrates. The amorphous property of the α-Zn1−xMgxO films was verified by x-ray diffraction, and atomic force microscopy revealed a smooth surface with sub-nanometer root-mean square roughness. The current phase segregation issue limiting application of crystalline Zn1−xMgxO with 38% < x < 75% was completely eliminated by growing amorphous films. Optical transmission measurements showed high transmissivity of more than 90% in the visible and near infrared regions, with optical bandgap tunability from 3.3 eV to more than 6.5 eV by varying the Mg content.

Deep-ultraviolet (DUV) photodetectors were fabricated from high quality NixMg1−xO epitaxially grown by plasma-assisted molecular beam epitaxy on an approximately lattice matched MgO ⟨100⟩ substrate. A mid-range Ni composition (x=0.54) NixMg1−xO film was grown for DUV (λpeak

We report on the demonstration of light emission from hybrid CdZnO quantum-well light emitting diodes. A one-dimensional drift-diffusion method was used to model the expected band structure and carrier injection in the device, demonstrating the potential for 90% internal quantum efficiency when a CdZnO quantum well is used. Fabricated devices produced visible electroluminescence that was found to redshift from 3.32 to 3.15 eV as the forward current was increased from 20 to 40 mA. A further increase in the forward current to 50 mA resulted in a saturation of the redshift.

The thermal stability of CdZnO∕ZnO multi-quantum-well (MQW) structures was studied using rapid thermal annealing in nitrogen from 300to750°C. Photoluminescence (PL) emission from the MQWs was studied while varying the annealing temperature and time. For 15min annealings, the PL center wavelength showed a 7nm reduction for temperatures up to 650°C. Above 650°C, the wavelength changed rapidly, with a 50nm reduction at 750°C. Annealing at 700°C for up to 20min produced a systematic reduction in PL wavelength up to 39nm. The data suggest that CdZnO∕ZnO MQWs are relatively stable for nitrogen annealing below 650°C for times up to 15min.