1. Negative ions for heavy ion fusion and semiconductor manufacturing applications
- Author
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S. K. Hahto, V. Benveniste, K. Saadatmand, S.T. Hahto, L. R. Grisham, Ka-Ngo Leung, and J.W. Kwan
- Subjects
Materials science ,Ion beam ,business.industry ,RF power amplifier ,Ion current ,Ion source ,Ion ,Optoelectronics ,Radio frequency ,Atomic physics ,business ,Instrumentation ,Current density ,Voltage - Abstract
Radio frequency driven multicusp source was set up to run chlorine plasma and the source performance was compared between positive and negative chlorine ion production. A maximum Cl− current density of 45 mA/cm2 was achieved at 2.2 kW of rf power with electron to negative ion ratio of 7 and positive to negative ion ratio of 1.3. 99.8% of the total negative chlorine beam was atomic Cl−. To produce negative boron ions for semiconductor manufacturing applications, a noncesiated, sputtering-type surface production ion source was constructed. An external rf antenna geometry and large LaB6 converter were implemented in the source design. Maximum B2− ion current density of 1 mA/cm2 was achieved at 800 W of rf power and −600 V converter voltage. Total B2− ion current was 1.8 mA.
- Published
- 2004
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