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Start Over Author "K., Alfaramawi" Publisher aip publishing
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1. Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates for high-mobility two-dimensional electron gases

Author

Elia Palange, Florestano Evangelisti, K. Alfaramawi, L. Di Gaspare, Gianni Barucca, and Guiseppe Majni

Subjects
Electron mobility, Materials science, Physics and Astronomy (miscellaneous), Silicon, Physics::Instrumentation and Detectors, business.industry, Semiconductor materials, Doping, chemistry.chemical_element, Silicon on insulator, Heterojunction, Electron, Condensed Matter::Materials Science, chemistry, Modulation, Condensed Matter::Superconductivity, Optoelectronics, Condensed Matter::Strongly Correlated Electrons, business
Abstract

The growth of high-mobility modulation-doped Si/SiGe heterostructures on silicon-on-insulator substrates is demonstrated. The structural and electrical properties of the samples are reported to be comparable with those of similar samples grown on standard Si substrates. Electron mobilities as high as 2900 cm2/Vs at room temperature and 8.2×104 cm2/Vs at 4.2 K were obtained.

Published
2001
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