1. A nonvolatile memory element based on an organic field-effect transistor
- Author
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Sylvie Dabos-Seignon, Jean-Michel Nunzi, Rémi de Bettignies, and K.N. Narayanan Unni
- Subjects
Materials science ,Organic field-effect transistor ,Physics and Astronomy (miscellaneous) ,business.industry ,Transistor ,Hardware_PERFORMANCEANDRELIABILITY ,Ferroelectricity ,Ferroelectric capacitor ,law.invention ,Non-volatile memory ,Pentacene ,chemistry.chemical_compound ,chemistry ,Hardware_GENERAL ,law ,Electrode ,Hardware_INTEGRATEDCIRCUITS ,Optoelectronics ,Field-effect transistor ,business ,Hardware_LOGICDESIGN - Abstract
Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties.
- Published
- 2004
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