1. Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces
- Author
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S. W. Huang, C. T. Wu, Kun-Pei Lin, C. N. Wu, C. C. Tseng, Mengxin Guo, Kai-Jen Chen, S. R. Yang, C. K. Cheng, Chia-Hao Chen, Y. T. Fanchiang, Minghwei Hong, and J. Kwo
- Subjects
Condensed Matter - Materials Science ,Materials science ,Quality (physics) ,Physics and Astronomy (miscellaneous) ,Condensed matter physics ,Topological insulator ,Rare earth ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences - Abstract
The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures., Comment: 17 pages, 4 figures
- Published
- 2019
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