60 results on '"Klem, J. F."'
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2. All-epitaxial resonant cavity enhanced long-wave infrared detectors for focal plane arrays
3. Long wavelength interband cascade lasers
4. Determination of background doping polarity of unintentionally doped semiconductor layers
5. Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy
6. Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices
7. Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers
8. Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices
9. Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers
10. Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices
11. Far infrared edge photoresponse and persistent edge transport in an inverted InAs/GaSb heterostructure
12. Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
13. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors
14. Giant supercurrent states in a superconductor-InAs/GaSb-superconductor junction
15. Temperature-dependent optical measurements of the dominant recombination mechanisms in InAs/InAsSb type-2 superlattices
16. McMillan-Rowell like oscillations in a superconductor-InAs/GaSb-superconductor junction
17. Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
18. Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
19. Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb field-effect transistors
20. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
21. Interband-cascade infrared photodetectors with superlattice absorbers
22. Interband cascade photovoltaic devices
23. Mesa-isolated InGaAs photodetectors with low dark current
24. High gain, broadband InGaAs∕InGaAsP quantum well infrared photodetector
25. Magneto-optical properties of GaAsSb/GaAs quantum wells
26. Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures
27. Deep-level defects in InGaAsN grown by molecular-beam epitaxy
28. Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy
29. Effects of prewells on transport in p-type resonant tunneling diodes
30. In-plane magnetophotoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells
31. Near-surface electronic structure on InAs(100) modified with self-assembled monolayers of alkanethiols
32. n‐type ion implantation doping of AlxGa1−xAs (0⩽x⩽0.7)
33. Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications
34. p‐type ion‐implantation doping of Al0.75Ga0.25Sb with Be, C, Mg, and Zn
35. Dislocation formation mechanism in strained InxGa1−xAs islands grown on GaAs(001) substrates
36. Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
37. Cyclotron mass of two-dimensional holes in strained-layer GaAs/In0.20Ga0.80As/GaAs quantum well structures
38. Novel pseudoalloy approach to epitaxial growth of complex InGaAlAs multilayer structures
39. InGaAs/GaAs multiple strained-layer structure grown on a lattice-matched InGaAs substrate wafer
40. Nucleation of misfit dislocations in In0.2Ga0.8As epilayers grown on GaAs substrates
41. Highly reflective, long wavelength AlAsSb/GaAsSb distributed Bragg reflector grown by molecular beam epitaxy on InP substrates
42. Parallel quantum point contacts fabricated with independently biased gates and a submicrometer airbridge post
43. Thermodynamically stablep‐channel strained‐layer AlGaAs/InGaAs/GaAs heterostructure field effect transistor
44. Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor‐phase epitaxy GaAs/AlxGa1−xAs structures
45. Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing
46. Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate
47. Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates
48. Highly accurate etching of ridge-waveguide directional couplers using in situ reflectance monitoring and periodic multilayers
49. Optical gain and ultrafast nonlinear response in GaAs/AlAs type‐II quantum wells
50. Erratum: ‘‘Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained‐layer quantum wells measured by resonant magnetotunneling’’ [Appl. Phys. Lett. 60, 601 (1992)]
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