52 results on '"Kop’ev, P. S."'
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2. Low-threshold green laser heterostructures with Zn(Mg)SSe/ZnSe graded-index superlattice waveguide: Structural and optical properties
3. Terahertz electroluminescence of surface plasmons from nanostructured InN layers
4. Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
5. High-power single mode (>1W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence
6. Recombination dynamics and lasing in ZnO∕ZnMgO single quantum well structures
7. Peculiarities of neutron-transmutation phosphorous doping of Si30 enriched SiC crystals: Electron paramagnetic resonance study
8. High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence
9. Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix
10. Electrically tunable mid-infrared electroluminescence from graded cascade structures
11. A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
12. Resonant suppression of exciton spin relaxation in Zn0.96Mn0.04Se/CdSe superlattices
13. Control of spin functionality in ZnMnSe-based structures: Spin switching versus spin alignment
14. Tunable laser spectroscopy of spin injection in ZnMnSe/ZnCdSe quantum structures
15. Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
16. BeCdSe as a ternary alloy for blue-green optoelectronic applications
17. Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
18. Frequency doubling and tripling of terahertz radiation in a GaAs/AlAs superlattice due to frequency modulation of Bloch oscillations
19. Midinfrared emission from near-infrared quantum-dot lasers
20. Collective resonance and form factor of homogeneous broadening in semiconductors
21. Cross-sectional atomic force microscopy of ZnMgSSe- and BeMgZnSe-based laser diodes
22. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
23. Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
24. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
25. CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers
26. Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices
27. Millimeter wave generation by a self-sustained current oscillation in an InGaAs/InAlAs superlattice
28. Ultrafast detection and autocorrelation of picosecond THz radiation pulses with a GaAs/AlAs superlattice
29. High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
30. Generation of millimeter waves with a GaAs/AlAs superlattice oscillator
31. Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structures
32. Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix
33. Bistable electroluminescence in p-i-n light-emitting tunnel-diodes enhanced by aperiodic-superlattice injectors
34. Effect of matrix on InAs self-organized quantum dots on InP substrate
35. Millimeter wave oscillator based on a quasiplanar superlattice electronic device
36. Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure
37. Properties of strained (In, Ga, Al)As lasers with laterally modulated active region
38. Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)]
39. Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction
40. Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing
41. Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix
42. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
43. Formation of coherent superdots using metal‐organic chemical vapor deposition
44. Resonant exciton effects in InAs monolayer insertions in a GaAs matrix
45. Suppression of current through an Esaki–Tsu GaAs/AlAs superlattice by millimeter wave irradiation
46. Excited states in self-organized InAs/GaAs quantum dots: Theory and experiment
47. Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots
48. Radiative recombination in type-II GaSb/GaAs quantum dots
49. Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface
50. Response to Comment: ‘‘Comment on ‘Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces’ ’’ [Appl. Phys. Lett. 66, 111 (1995)]
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