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Metal-Organic frameworks are the advanced electrode materials for supercapacitors due to their controllable structures and large surface area. Here Ni-MOF has been prepared by hydrothermal method for their application as electrode material in supercapacitors. The prepared material is characterized with the help of X-ray diffraction and Fourier transforms infrared spectroscopy. The electrochemical performance of the prepared material has been studied in 1M LiOH aqueous electrolyte using cyclic voltammetry and galvanostatic charge-discharge methods. We get the different values of specific capacitance at different scan rates. The prepared Ni-MOF shows maximum specific capacitance of 309.05 Fg-1 at 5mVs-1 scan rate.

Thin films of nickel cobalt oxide-reduced graphene oxide-polyvinyl alcohol (NCO-RGO-PVA) nanocomposite have been prepared for their use as electrode material for flexible supercapacitors. At first graphene oxide, synthesized by modified Hummer’s method, is reduced to reduced graphene oxide (RGO). Then, the nickel cobalt oxide nanoparticles have been prepared by hydrothermal method. Finally films of NCO-RGO-PVA have been prepared by chemical method. As prepared nanocomposite is then characterized structurally by X-ray diffraction (XRD). Also the crystallite size corresponding to prominent plane is calculated and it comes out to be ∼6 nm confirming the formation of nanocomposite. Electrochemical properties are interrogated by cyclic voltammetry and galvanostatic charge-discharge method. The nanocomposite films exhibit the specific capacitance of 127 Fg−1 at the current density of 0.67 Ag−1 and corresponding energy and power density comes out to be 17.6 Whkg−1 and 371 Wkg−1 respectively. The results show that the prepared nanocomposite can be a good electrode material for flexible supercapacitors.

Low-resistance and high quality contacts are necessary for utilizing the electronic applications of Transition Metal Dichalcogenides (TMDs). Earlier reported work on decreasing the contact resistance is mainly based on techniques those results in either oxidation or degradation of samples. So, achieving ohmic junction behavior of metal and semiconducting TMDs is the need of the hour to boost nanoelectronics. In this work, MoS2 thin films are synthesized using modified thermal chemical vapor deposition technique. Indium electrodes are deposited on these films and Indium-MoS2 junction is studied.

Local heat produced by an electrical path inside the memory was detected and imaged by the method “Thermal Analysis.” It turned out that the visualized heat spots were conductive filaments (CFs) formed between interlayers of Pt/amorphous InGaZnO (a-IGZO). By using the thermal analysis, the location of CFs and their surface temperature was detected. This method indicated that there was a lot of emitted heat when the memory cell was switched off. It is thought to be accumulated heat causing disruption of the CFs. With great range of measurement, it was found that some memory cells drive with a single CF and others drive with multiple CFs. For the formation of CFs, it is assumed that there are CFs formation sites such as oxygen-related defects, roughness of the layer of a-IGZO, and so on. This method “Thermal analysis” can contribute to detection of the CF's location, the number of CFs, and thermal activity inside the memory devices.