41 results on '"Myronov, M."'
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2. Quantum ballistic transport in strained epitaxial germanium
3. Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium
4. Hole weak anti-localization in a strained-Ge surface quantum well
5. Non-linear vibrational response of Ge and SiC membranes
6. Weak localization and weak antilocalization in doped germanium epilayers
7. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas
8. Spin-splitting in p-type Ge devices
9. Magnetotransport in p-type Ge quantum well narrow wire arrays
10. Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas
11. A strained silicon cold electron bolometer using Schottky contacts
12. Tensile strain mapping in flat germanium membranes
13. Silver antimony Ohmic contacts to moderately doped n-type germanium
14. High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry
15. Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well
16. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
17. Modelling the inhomogeneous SiC Schottky interface
18. High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation
19. Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
20. Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering
21. Ultra-high hole mobility exceeding one million in a strained germanium quantum well
22. Ohmic contacts to n-type germanium with low specific contact resistivity
23. Strain enhanced electron cooling in a degenerately doped semiconductor
24. High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates
25. Strain dependence of electron-phonon energy loss rate in many-valley semiconductors
26. Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
27. High mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate
28. Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
29. Overheating effect and hole-phonon interaction in SiGe heterostructures
30. Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures
31. Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping
32. Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping
33. Temperature dependence of transport properties of high mobility holes in Ge quantum wells
34. Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal–oxide–semiconductor field-effect transistor
35. Quantum interferometry and spin–orbit effects in a heterostructure with a 2D hole gas in a Si0.2Ge0.8 quantum well
36. Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
37. Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures
38. Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001)p-type modulation-doped heterostructures
39. Quantum effects in hole-type Si/SiGe heterojunctions
40. Quantum interference effects in delta layers of boron in silicon
41. Energy loss rates of two-dimensional hole gases in inverted Si/Si0.8Ge0.2 heterostructures
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