257 results on '"Speck, J. S."'
Search Results
2. Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes
3. Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers
4. Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder
5. Modeling dislocation-related leakage currents in GaN p-n diodes
6. Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin
7. Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN
8. Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride
9. Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy
10. Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
11. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes
12. Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy
13. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors
14. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures
15. Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes
16. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture
17. Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition
18. Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
19. Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells
20. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN
21. Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts
22. Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells
23. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
24. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture
25. Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106, 102101 (2015)]
26. High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates
27. Correlation of a generation-recombination center with a deep level trap in GaN
28. High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells
29. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
30. Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
31. Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)]
32. Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
33. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
34. Schottky contacts to In2O3
35. Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
36. Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
37. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN
38. Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition
39. High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
40. Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
41. Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
42. Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
43. Impact of proton irradiation on deep level states in n-GaN
44. Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
45. Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
46. Optical properties of extended and localized states in m-plane InGaN quantum wells
47. Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
48. Erratum: “Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures” [Appl. Phys. Lett. 101, 091601 (2012)]
49. Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
50. Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.