20 results on '"Storck, P."'
Search Results
2. Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source
3. Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)
4. Growth of ScN(111) on Sc2O3(111) for GaN integration on Si(111): Experiment and ab-initio calculations
5. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon
6. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts
7. Enhanced ultraviolet GaN photo-detector response on Si(111) via engineered oxide buffers with embedded Y2O3/Si distributed Bragg reflectors
8. Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory
9. Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)
10. Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory
11. Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111)
12. Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependence
13. Publisher's Note: “Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study” [J. Appl. Phys. 105, 033512 (2009)]
14. Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study
15. Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy
16. The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems
17. On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)
18. Structure, twinning behavior, and interface composition of epitaxial Si(111) films on hex-Pr2O3(0001)∕Si(111) support systems
19. Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)
20. Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.