1. Reactive ZnO/Ti/ZnO interfaces studied by hard x-ray photoelectron spectroscopy
- Author
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Rebecka Lindblad, Jean-Yvon Faou, Håkan Rensmo, Sergey Grachev, Mihaela Gorgoi, Ronny Knut, Olof Karis, Elin Sondergard, Department of Physics and Astronomy [Uppsala], Uppsala University, Surface du Verre et Interfaces (SVI), Centre National de la Recherche Scientifique (CNRS), and Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB)
- Subjects
Materials science ,Thin layers ,Annealing (metallurgy) ,Mean free path ,Analytical chemistry ,General Physics and Astronomy ,02 engineering and technology ,Sputter deposition ,Photoelectric effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,X-ray photoelectron spectroscopy ,Sputtering ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Thin film ,010306 general physics ,0210 nano-technology - Abstract
International audience; The chemistry and intermixing at buried interfaces in sputter deposited ZnO/Ti/ZnO thin layers were studied by hard x-ray photoelectron spectroscopy. The long mean free path of the photoelectrons allowed for detailed studies of the oxidation state, band bending effects, and intrinsic doping of the buried interfaces. Oxidation of the Ti layer was observed when ZnO was deposited on top. When Ti is deposited onto ZnO, Zn Auger peaks acquire a metallic character indicating a strong reduction of ZnO at the interface. Annealing of the stack at 200 C results in further reduction of ZnO and oxidation of Ti. Above 300 C, oxygen transport from the bulk of the ZnO layer takes place, leading to re-oxidation of ZnO at the interface and further oxidation of Ti layer. Heating above 500 C leads to an intermixing of the layers and the formation of a ZnxTiOy compound.
- Published
- 2014
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