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Metal intercalation using a solvent has produced significant advances in the development of Fe-chalcogenide superconducting materials. Recently, the superconducting transition temperature (TC) of metal-intercalated FeSe has been raised to 46 K using ammonia as the solvent for the alkali-metal atom. However, multiple superconducting phases have been found, which may arise from different concentrations of intercalants, further complicating the situation. Here, we report the synthesis of single-crystals of metal-intercalated FeSe superconductors using liquid ammonia, and their physical properties. Particularly, utilization of single-crystals allows us to investigate the resistivity in these ammoniated metal-intercalated FeSe superconductors, Ax(NH3)yFe2-δSe2, for the first time. Firstly, we compared with their TC s and the interlayer distance between the FeSe layers (dI) as a function of ionic radius (r) of the exchangeable intercalant. We found that both TC and dI show weak dependence on the r, if the r is smaller than the effective size of another intercalant, i.e., NH3 molecule. Besides the enhancement of the dI by the insertion of NH3 molecule, one expects that the charge-transfer due to the intercalation of cation would leads to the shift of the Fermi energy. The intercalants (Ba and K) have similar rs, but different valences (Ba2+ and K+), which may throw light on the significance of charge transfer. When the metal concentrations were investigated on the cleaved surfaces of these single crystals, clear differences were found between the two compounds, with the K-concentration about double the Ba-concentration, which may imply the identical charge-transfer. This was also supported for the investigation of the Li-concentration. These results suggest not only the local environment within the conductive FeSe layers but also the significance of the number of electronic charges supplied to the FeSe layers by the intercalated metal and/or ammonia molecules.

Field-effect transistor (FET) devices using thin crystals of FeSe1−xTex (x = 0.9 and 1.0) have been fabricated with an electric-double-layer (EDL) capacitor. Despite the presence of substantial quantities of electron and hole carriers in the bulk due to the semimetallic electronic structure of FeSe1−xTex, we have observed p-channel depletion-type FET characteristics, in contrast to the n-channel normally on FET characteristics of a Bi2Se3 EDL FET. In FeSe1−xTex, the mobile carriers, holes, are depleted in the channel region by accumulating electrons, resulting in a decrease in conductivity. This result is consistent with the experimentally observed positive Hall coefficient at room temperature.

Oxygen-17 is a stable oxygen isotope useful for various diagnostics in both engineering and medical applications. Enrichment of 17O, however, has been very costly due to the lack of appropriate methods that enable efficient production of 17O on an industrial level. In this paper, we report the first 17O-selective photodissociation of ozone at a relatively high pressure, which has been achieved by irradiating a gas mixture of 10 vol% O3-90 vol% CF4 with narrowband laser. The experiment was conducted on a pilot-plant scale. A total laser power of 1.6 W was generated by external-cavity diode lasers with all the laser wavelengths fixed at the peak of an absorption line of 16O16O17O around 1 μm. The beams were introduced into a 25 -m long photoreaction cell under the sealed-off condition with a total pressure of 20 kPa. Lower cell temperature reduced the background decomposition of ozone, and at the temperature of 158 K, an 17O enrichment factor of 2.2 was attained.

The average magnetic moment per Fe atom for a single‐phase, single‐crystal Fe16N2(001) film epitaxially grown on a GaAs(001) substrate by molecular beam epitaxy has been confirmed to be 3.5μB at room temperature by using a vibrating sample magnetometer (VSM) and Rutherford backscattering. The value was in good agreement with that obtained by using a VSM and by measuring the film thickness (3.3μB per Fe atom). The saturation magnetization 4πMs has been found to increase with decreasing temperature, obeying T3/2 law at lower temperatures. The slope was steeper than that of a pure Fe film, suggesting a lower exchange constant for Fe16N2. The g factor for Fe16N2 has been accurately measured to be 2.17 by using ferromagnetic resonance with changing frequencies of 35.5–115 GHz, which is not unusual compared with the g factor of 2.16 for pure Fe. The resistivity for Fe16N2 has been measured to be around 30 μΩ cm at room temperature compared with 10 μΩ cm for pure Fe and decreases linearly with decreasing tempera...