1. Phosphorus in-diffusion from a surface source by millisecond flash lamp annealing for shallow emitter solar cells
- Author
-
Wolfgang Skorupa, Thomas Schumann, Birte Svensson, Lasse Vines, Edouard Monakhov, H. B. Normann, and V. Privitera
- Subjects
Flash-lamp ,Millisecond ,Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,business.industry ,Annealing (metallurgy) ,Analytical chemistry ,chemistry.chemical_element ,doping ,millisecond annealing ,solar cell ,Monocrystalline silicon ,photovoltaics ,chemistry ,electrical activation ,flash lamp annealing ,Energy density ,Optoelectronics ,phosphorus ,business ,Junction depth ,Common emitter - Abstract
We have investigated in-diffusion of phosphorus into monocrystalline silicon by depositing a phosphorus source on the surface followed by millisecond flash lamp annealing (FLA) to form shallow emitters for solar cells. By varying both the energy density of a 20 ms flash in the range from 62 to 132 J/cm(2) and the sample preheating, it is observed that FLA treatments can in-diffuse a high concentration of phosphorus atoms becoming electrically active. The most promising emitters are obtained after FLA in the energy range from 110 to 128 J/cm(2) including preheating at 300 degrees C with a peak concentration of 4 - 6 x 10(20) cm(-3). The emitter junction depth for these treatments is in the range of 100 nm to 200 nm, respectively.
- Published
- 2013
- Full Text
- View/download PDF