33 results on '"Tu, L W"'
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2. Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy
3. Above room-temperature ferromagnetism of Mn delta-doped GaN nanorods
4. Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films
5. GaN nanowire ultraviolet photodetector with a graphene transparent contact
6. Evolution of nanoripples on silicon by gas cluster-ion irradiation
7. Effects of non-ideal energy selective contacts and experimental carrier cooling rate on the performance of an indium nitride based hot carrier solar cell
8. Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations
9. Carrier recombination dynamics in Si doped InN thin films
10. Effect of temperature and V/III ratio on the initial growth of indium nitride using plasma-assisted metal-organic chemical vapor deposition
11. Photogated transistor of III-nitride nanorods
12. Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
13. p -GaN / InGaN / n -GaN pedestal nanorods: Effect of postgrowth annealing on the electrical performance
14. InN nanotips as excellent field emitters
15. Auger recombination in InN thin films
16. Energy relaxation of InN thin films
17. Erratum: “Generation of electricity in GaN nanorods induced by piezoelectric effect” [Appl. Phys. Lett. 90, 063110 (2007)]
18. Generation of electricity in GaN nanorods induced by piezoelectric effect
19. Electrostatic and structural properties of GaN nanorods/nanowires from first principles
20. Epitaxial GaN nanorods free from strain and luminescent defects
21. Contactless electroreflectance and photoreflectance studies of n- and p-type-doped GaN with Ga and N face
22. Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy
23. Polymer PBT/n-GaN metal–insulator–semiconductor structure
24. High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure
25. Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs
26. Yellow luminescence depth profiling on GaN epifilms using reactive ion etching
27. In-vacuum cleaving and coating of semiconductor laser facets using thin silicon and a dielectric
28. Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy
29. Superior output linearity of optimized double heterostructure vertical‐cavity top‐emitting lasers
30. Resonant cavity light‐emitting diode
31. Elimination of heterojunction band discontinuities by modulation doping
32. Low‐threshold vertical cavity surface‐emitting lasers with metallic reflectors
33. Shubnikov–de Haas effect in thin epitaxial films of gray tin
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