1. The importance of metal transverse momentum for silicon contact resistivity
- Author
-
Weber Cory E
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,Condensed matter physics ,Orders of magnitude (temperature) ,Contact resistance ,chemistry.chemical_element ,Mineralogy ,Metal ,Transverse plane ,chemistry ,Electrical resistivity and conductivity ,visual_art ,Density of states ,Limiter ,visual_art.visual_art_medium - Abstract
Contact resistance is becoming an increasing performance limiter as complimentary metal oxide semiconductor devices are scaled. Non-equilibrium Green's function transport simulations are used to evaluate contact resistivity (ρc) to silicon for metals with different density of states (DOS) distributions in k-space and different Si surface orientations. It is shown that the overlap of the metal and silicon DOS in k-space can have orders of magnitude impact to ρc, as this overlap determines whether the low resistivity transverse valleys will conduct. Thus, technologists and materials researchers should search for contact metals with a DOS distribution overlapping the silicon Δ valleys as well metals with low barriers.
- Published
- 2013