35 results on '"Xia, Yidong"'
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2. Band-alignment dominated retention behaviors in high-k composite charge-trapping memory devices
3. Enhancement of resistive switching ratio induced by competing interfacial oxygen diffusion in tantalum oxide based memories with metal nitride electrode
4. Light-controlled stateful logic operations using optoelectronic switches based on p-Si/HfO2 heterostructures
5. Piezoelectricity in two-dimensional covalent organic frameworks
6. Many-body dissipative particle dynamics modeling of fluid flow in fine-grained nanoporous shales
7. Quantum spin Hall insulator phase in monolayer WTe2by uniaxial strain
8. Coexistence of negative photoconductivity and hysteresis in semiconducting graphene
9. The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices
10. The dominant factors affecting the memory characteristics of (Ta2O5)x(Al2O3)1−x high-k charge-trapping devices
11. Memristive learning and memory functions in polyvinyl alcohol polymer memristors
12. Enhanced half-metallicity in the zigzag graphene nanoribbons by adsorption of the zigzag hydrogen fluoride molecular chains
13. Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure
14. Erratum: “Ga2Te3 phase change material for low-power phase change memory application” [Appl. Phys. Lett. 97, 083504 (2010)]
15. The interface inter-diffusion induced enhancement of the charge-trapping capability in HfO2/Al2O3 multilayered memory devices
16. Conduction mechanism of resistance switching in fully transparent MgO-based memory devices
17. The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices
18. Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
19. Preparation and characterization of GeTe4thin films as a candidate for phase change memory applications
20. Effect of top electrode materials on bipolar resistive switching behavior of gallium oxide films
21. A TiAl2O5 nanocrystal charge trap memory device
22. Unipolar resistive switching behaviors in amorphous lutetium oxide films
23. Ga2Te3 phase change material for low-power phase change memory application
24. Memristive behaviors of LiNbO3 ferroelectric diodes
25. Conduction behavior change in amorphous LaLuO3 dielectrics based on correlated barrier hopping theory
26. Modulation of the band offsets between La2Hf2O7 and fully depleted SiGe on insulator by NH3 treatment
27. Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte films
28. Electrical hysteresis of the Ti0.25Al0.75Ox dielectric films after high-temperature treatment
29. Studies of two distinct types of (Ba,Sr)TiO3∕Pt interfaces
30. Conduction behavior change responsible for the resistive switching as investigated by complex impedance spectroscopy
31. Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films
32. Field-induced resistive switching based on space-charge-limited current
33. Effects of the substitution of Pb for Ba in (Ba,Sr)TiO3 films on the temperature stability of the tunable properties
34. Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films
35. Electrical properties of chemical-solution-derived Bi3.54Nd0.46Ti3O12 ferroelectric thin films
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