31 results on '"Yu, L. S."'
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2. Effects of oxidation by O2 plasma on formation of Ni∕Au ohmic contact to p-GaN
3. Photocurrent method for characterizing the interface of hydrophobically bonded Si wafers
4. Single crystal Si layers on glass formed by ion cutting
5. Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures
6. Study of Schottky barrier of Ni on p-GaN
7. Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
8. Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
9. A study of the Au/Ni ohmic contact on p-GaN
10. A simple reflectance method for estimation of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructures
11. Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method
12. Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure
13. Schottky barrier engineering in III–V nitrides via the piezoelectric effect
14. The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes
15. Ni and Ni silicide Schottky contacts on n-GaN
16. Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates
17. Planar semiconductor lasers using the photoelastic effect
18. Deep level defects in n-type GaN grown by molecular beam epitaxy
19. Study of contact formation in AlGaN/GaN heterostructures
20. Thermally stable PtSi Schottky contact on n-GaN
21. Direct measurement of the refractive index change of silicon with optically injected carriers
22. Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors
23. Photoelastic waveguides and the controlled introduction of strain in III‐V semiconductors by means of thin film technology
24. Silicon on insulator photoelastic optical waveguide and polarizer
25. Planar 1.3 and 1.55 μm InGaAs(P)/InP electroabsorption waveguide modulators using oxygen ion mixing and the photoelastic effect
26. Laser spectral linewidth dependence on waveguide loss measurements using the Fabry–Perot method
27. Photoelastic AlGaAs/GaAs waveguide polarizer
28. Photoelastic waveguides formed by interfacial reactions
29. Planar, low‐loss optical waveguides fabricated by solid‐phase regrowth
30. The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme onn‐GaAs
31. Planar Ge/Pd and alloyed Au‐Ge‐Ni ohmic contacts ton‐AlxGa1−xAs (0≤x≤0.3)
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