61 results on '"Zhao, Hongping"'
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2. Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters
3. Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy
4. 7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management
5. Electrical characteristics of in situ Mg-doped β-Ga2O3 current-blocking layer for vertical devices
6. Tutorial: Metalorganic chemical vapor deposition of β-Ga2O3 thin films, alloys, and heterostructures
7. Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX
8. Investigation of carbon incorporation in laser-assisted MOCVD of GaN
9. Metalorganic chemical vapor deposition of β-(AlxGa1−x)2O3 thin films on (001) β-Ga2O3 substrates
10. Vertical GaN-on-GaN pn power diodes with Baliga figure of merit of 27 GW/cm2
11. Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3
12. In situ MOCVD growth and band offsets of Al2O3 dielectric on β-Ga2O3 and β-(AlxGa1−x)2O3 thin films
13. Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3
14. We are 60!
15. β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching
16. Si doping in MOCVD grown (010) β-(AlxGa1−x)2O3 thin films
17. Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates
18. A perspective on β-Ga2O3 micro/nanoelectromechanical systems
19. Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates
20. Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux
21. Young's modulus and corresponding orientation in β-Ga2O3 thin films resolved by nanomechanical resonators
22. Optical phonon modes, static and high-frequency dielectric constants, and effective electron mass parameter in cubic In2O3
23. Ultrawide bandgap semiconductors
24. Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1−x)2O3 films
25. Band offsets of (100)β -(AlxGa1−x)2O3/ β -Ga2O3 heterointerfaces grown via MOCVD
26. Mg acceptor doping in MOCVD (010) β-Ga2O3
27. Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
28. MOCVD growth of β-phase (AlxGa1−x)2O3 on ( 2 ¯01) β-Ga2O3 substrates
29. Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films’” [APL Mater. 8, 089101 (2020)]
30. Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices
31. Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN2 films grown on GaN by metalorganic chemical vapor deposition
32. A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1−x)2O3
33. Deep level defects and cation sublattice disorder in ZnGeN2
34. Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films
35. Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
36. MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010) Ga2O3 substrates and N-type doping
37. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
38. Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition
39. Low pressure chemical vapor deposition of β-Ga2O3thin films: Dependence on growth parameters
40. Donors and deep acceptors in β-Ga2O3
41. Design of InGaN-ZnSnN2 quantum wells for high-efficiency amber light emitting diodes
42. Optical signatures of deep level defects in Ga2O3
43. Lifetime laser damage performance of β-Ga2O3 for high power applications
44. LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates
45. Study of intersubband transitions in GaN-ZnGeN2 coupled quantum wells
46. Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
47. Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells
48. Interfacial structure designs with impedance-matching for ideal broadband antireflections
49. Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
50. Simulation analysis of GaN microdomes with broadband omnidirectional antireflection for concentrator photovoltaics
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