Search

This work presents a simple method to deposit palladium doped tin oxide (SnO(2)) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl(4)) was used as precursor and oxygen (O(2), 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C(5)HF(6)O(2))(2)) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd(2)Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 °C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

This work presents low temperature (200 and 300°C) thin film deposition of tin oxide (SnO2) using modified plasma enhanced chemical vapor deposition as a function of radio frequency power (100–500W). Stannic chloride (SnCl4) was used as precursor and oxygen (O2, 300SCCM) as reactant gas. Fine granular morphology was observed with tetragonal rutile structure grown along the [110] direction, at all the deposition conditions. Higher plasma power resulted in smoother morphology, improved crystallinity, and enhanced conductivity. Electrical resistivity value of as low as ∼0.01Ωcm was obtained at the deposition temperature of 300°C and 250W of plasma power.