1. Metal Organic ChemicalVapor Deposition of Phase ChangeGe1Sb2Te4Nanowires.
- Author
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Longo, Massimo, Fallica, Roberto, Wiemer, Claudia, Salicio, Olivier, Fanciulli, Marco, Rotunno, Enzo, and Lazzarini, Laura
- Subjects
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METAL organic chemical vapor deposition , *PHASE change memory , *NANOWIRES , *GERMANIUM compounds , *GOLD catalysts , *MOLECULAR self-assembly , *TEMPERATURE effect - Abstract
The self-assembly of Ge1Sb2Te4nanowires (NWs) for phase change memories application wasachievedby metal organic chemical vapor deposition, catalyzed by Au nanoislandsin a narrow range of temperatures and deposition pressures. In theoptimized conditions of 400 °C, 50 mbar, the NWs are Ge1Sb2Te4single hexagonal crystals. Phase changememory switching was reversibly induced by nanosecond current pulsesthrough metal-contacted NWs with threshold voltage of about 1.35 V. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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