1. Effect of high cobalt concentration on hopping motion in cobalt manganese spinel oxide (CoxMn3–xO4,x≥ 2.3)
- Author
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Han Chan Lee, Sungwook Mhin, Jae Seok Lee, Jacob L. Jones, Jiun Lim, Jeong Ho Ryu, Kang Min Kim, Sophie Guillemet-Fritsch, HyukSu Han, National Institute for Advanced Industrial Science and Technology - AIST (JAPAN), Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - INPT (FRANCE), North Carolina State University (USA), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), University of Florida (USA), Ajou University (KOREA), Korea Institute of Industrial Technology - KITECH (KOREA), Korea National University of Transportation - KNUT (KOREA), Centre Interuniversitaire de Recherche et d'Ingénierie des Matériaux - CIRIMAT (Toulouse, France), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE), Korea Institute of Industrial Technology, University of Florida [Gainesville] (UF), Korea National University of Transportation (KNUT), National Institute of Advanced Industrial Science and Technology (AIST), North Carolina State University [Raleigh] (NC State), University of North Carolina System (UNC), Ajou University, Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), and Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)
- Subjects
Chimie-Physique ,Matériaux ,Analytical chemistry ,Oxide ,chemistry.chemical_element ,Mineralogy ,02 engineering and technology ,Manganese ,engineering.material ,01 natural sciences ,Variable-range hopping ,[SPI.MAT]Engineering Sciences [physics]/Materials ,symbols.namesake ,chemistry.chemical_compound ,0103 physical sciences ,Physical and Theoretical Chemistry ,010302 applied physics ,Spinel ,Fermi level ,021001 nanoscience & nanotechnology ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,General Energy ,chemistry ,Cobalt manganese oxide ,Density of states ,engineering ,symbols ,[PHYS.PHYS.PHYS-CHEM-PH]Physics [physics]/Physics [physics]/Chemical Physics [physics.chem-ph] ,0210 nano-technology ,Effect of cobalt ,Cobalt ,Temperature coefficient - Abstract
International audience; Hopping motions in cobalt manganese spinel oxides with high cobalt concentration (CoxMn3−xO4, 2.3 ≤ x ≤ 2.7) are investigated in order to clarify the origin of unusual electrical behaviors as negative temperature coefficient (NTC) thermistors. Based on the resistance versus temperature (R−T) characteristics, hopping conduction mechanisms in MCO compounds (x = 2.3 and 2.5) are attributed to variable range hopping (VRH) motion with a parabolic distribution of the density of states (DOS) near the Fermi level. However, when Co content increases up to 2.7, transition in the hopping motion occurs from VRH to the nearest neighboring hopping (NNH) motion, which can be responsible for a huge increase of the resistance accompanied by decrease of the factor of thermal sensitivity (B value) in MCO compounds (x = 2.7). Also, hopping distance and activation energies for MCO (x = 2.3 and 2.5) compounds following VRH conduction are calculated as a function of temperature, indicating that higher B value observed in MCO (x = 2.5) compound is due to the larger hopping distance compared to that of MCO (x = 2.3) compound.
- Published
- 2016