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Deposition technology of transparentconducting oxide (TCO) thinfilms is critical for high performance of optoelectronic devices.Solution-based fabrication methods can result in substantial costreduction and enable broad applicability of the TCO thin films. Herewe report a simple and highly effective solution process to fabricateindium–tin oxide (ITO) thin films with high uniformity, reproducibility,and scalability. The ITO films are highly transparent (90.2%) andconductive (ρ = 7.2 × 10–4Ω·cm)with the highest figure of merit (1.19 × 10–2Ω–1) among all the solution-processed ITOfilms reported to date. The high transparency and figure of merit,low sheet resistance (30 Ω/sq), and roughness (1.14 nm) arecomparable with the benchmark properties of dc sputtering and canmeet the requirements for most practical applications. [ABSTRACT FROM AUTHOR]