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Two-dimensional (2D) materials, featuring distinctive electronic and optical properties and dangling-bond-free surfaces, are promising for developing high-performance on-chip photodetectors in photonic integrated circuits. However, most of the previously reported devices operating in the photoconductive mode suffer from a high dark current or a low responsivity. Here, we demonstrate a MoTe 2 p - i - n homojunction fabricated directly on a silicon photonic crystal (PC) waveguide, which enables on-chip photodetection with ultralow dark current, high responsivity, and fast response speed. The adopted silicon PC waveguide is electrically split into two individual back gates to selectively dope the top regions of the MoTe 2 channel in p - or n -types. High-quality reconfigurable MoTe 2 ( p - i - n , n - i - p , n - i - n , p - i - p ) homojunctions are realized successfully, presenting rectification behaviors with ideality factors approaching 1.0 and ultralow dark currents less than 90 pA. Waveguide-assisted MoTe 2 absorption promises a sensitive photodetection in the telecommunication O-band from 1260 to 1340 nm, though it is close to MoTe 2 's absorption band-edge. A competitive photoresponsivity of 0.4 A/W is realized with a light on/off current ratio exceeding 10 4 and a record-high normalized photocurrent-to-dark-current ratio of 10 6 mW -1 . The ultrasmall capacitance of p - i - n homojunction and high carrier mobility of MoTe 2 promise a high dynamic response bandwidth close to 34.0 GHz. The proposed device geometry has the advantages of employing a silicon PC waveguide as the back gates to build a 2D material p - i - n homojunction directly and simultaneously to enhance light-2D material interaction. It provides a potential pathway to develop 2D material-based photodetectors, laser diodes, and electro-optic modulators on silicon photonic chips.

Plasmonic nanocavities enable extreme light-matter interaction by pushing light down to the nanoscale. The dipolar feature of bright modes allows coupling with the external excitation from free space but results in a radiating background, whereas nonradiating dark plasmon modes can hardly be excited. Here, we report for the first time on strong coupling between dark plasmon and anapole modes in a hybrid metal-dielectric nanostructure. With the aid of vanishing dipole characteristics of the anapole and dark plasmons, the hybrid modes exhibit minimum far-field scattering and maximum near-field enhancement. The dark mode coupling in the metal-dielectric nanostructure offers a nonradiating air cavity with greatly improved field enhancement in a broadened band, thus providing a background-free experimental platform for spectroscopic applications. The proposed approach to dark plasmon excitation, i.e., via anapole, may boost practical exploitation of dark plasmons by allowing linearly polarized light illumination and scalable arrays of individual nanostructure units.

Self-assembled growth of SrTi 0.87 Fe 0.13 O 3-δ (STF)/ZnO vertical nanocomposite films by combinatorial pulsed laser deposition is described. The nanocomposite films form vertically aligned columnar epitaxial nanostructures on SrTiO 3 substrates, in which the STF shows room-temperature magnetism. The magnetic properties are discussed in terms of strain states, oxygen vacancies, and microstructures. The nanocomposites exhibit magneto-photoluminescent coupling behavior that the near-band-edge emission of ZnO is shifted as a function of magnetic field.

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

Vertically aligned ZnO nanorods were grown at 90 °C by both microwave synthesis and traditional heated water bath method on Si (100) substrate with a precoated ZnO nanoparticle seed layer. A detailed comparison in the morphology, defects, and optical properties of the ZnO nanorods grown by the two methods across the pH range of 10.07-10.9 for microwave synthesis and conventional heated water bath method was performed using scanning electron microscopy, photoluminescence, and X-ray photoelectron spectroscopy. The results show that the microwave route leads to more uniformly distributed nanorods with a lower density of native defects of oxygen interstitials and zinc vacancies. The microwave synthesis presents a promising new approach of fabricating metal oxide nanostructures and devices toward green applications.

We report on synthesis and properties of p-type Ga2S3 semiconductor thin films that were prepared by sulfurizing epiready n-type GaAs (111) surface at elevated temperatures. Comparisons of structural and optical properties among the thin films, peeling-off resulted microtubes, and the remains after peeling-off give a clear clue to the crystal growth and phase evolutions of Ga2S3. Three layers of Ga2S3 are clearly identified in the thin films. They are layer i, cubic Ga2S3 epitaxially grown on the GaAs (111) substrate; layer ii, polycrystalline cubic Ga2S3 on top of layer-i; and layer iii, monoclinic and/or hexagonal Ga2S3 on top of layer ii. The onset of peeling-off occurred in layer i and/or at the interface between layer i and ii. Both the phase evolutions and the location of peeling-off are associated with a Ga out diffusion growth mechanism. Absorption spectroscopy revealed a direct bandgap of 3.0 eV, whereas photoluminescence spectra showed defects (excited Ga vacancies) related red (1.62 eV) and green (2.24 eV) emissions of the Ga2S3 films; both are qualitatively consistent with those reported values obtained at lower sample temperatures from Ga2S3 single crystals. These results, together with a large on/off current ratio (i.e., ∼14 at a bias of 4.0 V) of the resultant hetero p-Ga2S3/n-GaAs junction under a blue laser (405 nm, 3.0 mW) illumination, shed light on consequent integrations of Ga2S3- and GaAs-based optoelectronic devices, e.g., high-power laser radiation sensors.

The dependence of morphology and polymer-chain orientation of regioregular poly(3-hexylthiophene) (rrP3HT) thin films on processing conditions have been widely studied. However, their possible variation across the film thickness direction remains largely unknown. We report here a marked difference in the optical dielectric (n,k) spectra between the top and bottom interfaces of spin-cast (sc) rrP3HT films deposited from chlorobenzene solutions. These spectra were obtained from reflection variable-angle spectroscopic ellipsometry using a self-consistent graded optical model with self-imposed Kramers-Krönig consistency. The top interface shows a red-shifted absorption that is characteristic of better order than at the bottom, across a wide range of film thicknesses. This disparity diminishes in drop-cast (dc) and multipass inkjet-printed (ijp) films, and disappears in amorphous films such as those of polystyrene and of a green-emitting phenyl-substituted poly(p-phenylenevinylene). The (n,k) spectra also reveal that crystallinity increases across sc < dc < ijp films. This is supported by cross section scanning electron microscopy of the cleaved edges and measurement of the microroughness of both the film interfaces. Furthermore, optical anisotropy decreases across sc > dc > ijp films. Finally, near-edge X-ray absorption fine structure spectroscopy also shows the frontier chains in ijp and dc films are more isotropically oriented than those in sc films. These results suggest that semicrystalline conjugated polymer films can be produced far from equilibrium. This explains the marked variation in their (opto)electronic properties between the top and bottom surfaces that has sometimes been found depending on the film deposition method. In particular, an unusually pronounced crystallization is induced by ijp. We label this marked ijp-induced crystallization the "ijp morphology", which appears to be general, as it is found also in single-inkjet-droplet films. It appears also to be responsible for the lower field-effect mobility measured for ijp films deposited on a variety of linear and circular electrode arrays. This however can fortuitously be reversed by annealing in solvent vapor. As all films were deposited in the low Peclet-number regime, we can rule out surface skin formation. We attribute the extensive crystallization to the non-uniform drying of picoliter droplets, further promoted by repeated film swelling-deswelling cycles in multipass-ijp films.

With planar photolithography and self-assembly techniques, multilayer colloidal crystals with a woodpile structure were fabricated. They represent a new kind of photonic crystals, that is, three-dimensional (3D) photonic crystals with a dual periodicity; one comes from the face-centered cubic (fcc) structure within the colloidal crystal strips and the other one results from the periodic arrangement of the colloidal crystal strips.