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A novel approach to suppress bulk conductance in three-dimensional (3D) topological insulators (TIs) using short-period superlattices (SLs) of two TIs is presented. Evidence for superlattice gap enhancement (SGE) was obtained from the reduction of bulk background doping from 1.2 × 10 20 cm -3 to 8.5 × 10 18 cm -3 as the period of Bi 2 Se 3 /Sb 2 Te 3 SLs is decreased from 12 nm to 5 nm. Tight binding calculations show that, in the ultrashort-period regime, a significant SGE can be achieved for the resulting SL. Ultrathin short-period SLs behave as new designer TIs with bulk bandgaps up to 60% larger than the bandgap of the constituent layer of largest bandgap, while retaining topological surface features. Evidence for gap formation was obtained from ellipsometric measurements. Analysis of the weak antilocalization cusp in low-temperature magneto-conductance confirms that the top and bottom surfaces of the SL structure behave as Dirac surfaces. This approach represents a promising platform for building truly insulating TIs.

We study unconventional superconductivity in exfoliated single crystals of a promising three-dimensional (3D) topological superconductor candidate, Nb-doped Bi 2 Se 3 through differential conductance spectroscopy and magneto-transport. The strong anisotropy of the critical field along the out-of-plane direction suggests that the thin exfoliated flakes are in the quasi-2D limit. Normal metal-superconductor (NS) contacts with either high or low transparencies made by depositing gold leads onto Nb-doped Bi 2 Se 3 flakes both show significant enhancement in zero bias conductance and coherence dips at the superconducting energy gap. Such behavior is inconsistent with conventional Blonder-Tinkham-Klapwijk theory. Instead, we discuss how our results are consistent with p-wave pairing symmetry, supporting the possibility of topological superconductivity in Nb-doped Bi 2 Se 3 . Finally, we observe signatures of multiple superconducting energy gaps, which could originate from multiple Fermi surfaces reported earlier in bulk crystals.