Search

Atom-vacancy-defects present in various materials yield numerous interesting physical phenomena, even obstructing high performance in some cases. On the other hand, their valuable applications to novel devices, such as nitrogen vacancy centers in diamond for quantum bits, have gathered significant attention. In particular, these tendencies become more substantial in two-dimensional (2D) (atomically) thin van der Waals layers. However, correlations with various kinds of atom defects are still under exploration. Herein, we find the stochastic behaviors of large hysteresis loops with strong photoresponse in the static electrical properties in few-atom layer semiconductors, molybdenum disulfide (MoS 2 ). The temperature dependence and transmission electron microscopy reveal that they arise from pairs of two neighboring in-plane S-vacancy defects, which predominantly present only around the interface at the MoS 2 flake/substrate, with activation energies ∼0.35 eV. The low-frequency ( f ) (LF) noise measurements clarify a high f shift in the two 1/ f 2 -dependent regimes, implying stochastic behaviors of electric charges through the S-vacancy pairs with high-speed charge(spin) transitions across low kinetic energy barriers between narrow discrete states. The shallow energy sates are formed from the highly uniform S-vacancy pairs interacting with Mo atoms, which act like quantum dots. The observed stochastic operation holds promise for various application, particularly for probabilistic neuromorphic computation in artificial intelligence.

Fluoride-shuttle batteries (FSBs), which are based on fluoride-ion transfer, have attracted attention because of their high theoretical energy densities. The fluorination and defluorination reactions at the electrodes are the possible rate-determining steps in FSBs, and understanding the mechanism is important to achieve smooth charge/discharge. In this study, we discuss the thermodynamically favored pathways for the fluorination and defluorination reactions and compare the reactions through the solid-solution and two-phase-coexistent states by density functional theory (DFT) calculations. The free energies of the solid-solution and two-phase states approximate the energies calculated by DFT, and their accuracy was validated by comparison with experimental formation enthalpies and free energies. The relative formation enthalpies of typical, transition, and relativistic metal (Tl, Pb, and Bi) fluorides are well reproduced by DFT calculations within 0.1, 0.2, and 0.4 eV, respectively. We also show that the reaction pathway can be determined by comparing the formation enthalpies of the metal fluoride H , a fluorine vacancy H V , and an interstitial fluorine defect H I from the simple selection rule. The enthalpy relation of H I > H > - H V observed in all the calculations strongly suggests that fluorination and defluorination in FSB electrodes occur by a two-phase reaction. This fluorination and defluorination mechanism will be useful to clarify the rate-determining step in FSBs.

We investigated electron injection rates and vacancy defect properties by performing first-principles calculations on the interface of an anatase-TiO 2 (001) and a tetragonal CH 3 NH 3 PbI 3 (110) (MAPbI 3 (110)). We found that the coupling matrix element between the lowest unoccupied molecular orbital of MAPbI 3 and the TiO 2 conduction band (CB) minimum is negligibly small, the indication being that electron-injection times for low-energy excited states are quite long (more than several tens of picoseconds). We also found that higher-lying CB states coupled more strongly; injection was expected to take place on a femtosecond time scale. Furthermore, we found that vacancy defects in the TiO 2 layer produced undesired defect levels that caused hole traps and recombination centers. Whereas most of the vacancy defects in the MAPbI 3 layer produced no additional states in the MAPbI 3 gap, a Pb vacancy (V Pb ) at the interface created an energy level below the MAPbI 3 CB edge and had a lower energy of formation than the V Pb defect in bulk because of the interaction with the TiO 2 surface.

All-solid-state Li-ion batteries (ASS-LIBs) are expected to be the next-generation battery, however, their large interfacial resistance hinders their widespread application. To understand and resolve the possible causes of this resistance, we examined mutual diffusion properties of the cation elements at LiCoO 2 (LCO) cathode/β-Li 3 PS 4 (LPS) solid electrolyte interface as a representative system as well as the effect of a LiNbO 3 buffer layer by first-principles calculations. Evaluating energies of exchanging ions between the cathode and the electrolyte, we found that the mixing of Co and P is energetically preferable to the unmixed states at the LCO/LPS interface. We also demonstrated that the interposition of the buffer layer suppresses such mixing because the exchange of Co and Nb is energetically unfavorable. Detailed analyses of the defect levels and the exchange energies by using the individual bulk crystals as well as the interfaces suggest that the lower interfacial states in the energy gap can make a major contribution to the stabilization of the Co ↔ P exchange, although the anion bonding preference of Co and P as well as the electrostatic interactions may have effects as well. Finally, the Co ↔ P exchanges induce interfacial Li sites with low chemical potentials, which enhance the growth of the Li depletion layer. These atomistic understandings can be meaningful for the development of ASS-LIBs with smaller interfacial resistances.

Perovskite solar cells (PSCs) have attracted considerable interest because of their high potential for solar energy conversion. Power conversion efficiencies of the PSCs have rapidly increased from 3.8 to over 20% only in the past few years. PSCs have several similarities to dye-sensitized solar cells in their device compositions; mesoporous TiO2 (mp-TiO2) is sensitized by light-absorbing components and placed into a medium containing hole transporting materials (HTMs). On the other hand, the perovskite materials for the light-harvesting, for example, CH3NH3PbI3 (MAPbI3), have a greater advantage for the photovoltaic applications; extremely long photocarrier diffusion lengths (over 1 μm) enable carrier transports without singnificant loss. In this respect, the surface states, that can be possible recombination centers, are also of great importance. Availability of solution processes is another important aspect in terms of low cost fabrication of PSCs. Two-step methods, where PbI2 is first introduced from solution onto a mp-TiO2 film and subsequently transformed into the MAPbI3 by the exposition of a solution containing MAI, suggest that use of such a high PbI2 concentration is crucial to obtain higher performance. The experiments also indicate that the PbI2-rich growth condition modifies TiO2/ or HTM/MAPbI3 interfaces in such a way that the photocarrier transport is improved. Thus, the characteristics of surfaces and interfaces play key roles in the high efficiencies of the PSCs. In this Account, we focus on the structural stability and electronic states of the representative (110), (001), (100), and (101) surfaces of tetragonal MAPbI3, which can be regarded as reasonable model HTM/MAPbI3 interfaces, by use of first-principles calculations. By examining various types of PbIx polyhedron terminations, we found that there are two major phases on all of the four surface facets. They can be classified as vacant- and flat-type terminations, and the former is more stable than the latter under thermodynamically equilibrium conditions. More interestingly, both terminations can coexist especially on the more probable (110) and (001) surfaces. Electronic states, that is, projected density of states, of the stable-vacant and PbI2-rich-flat terminations on the two surfaces are almost the same as that in bulk MAPbI3. These surfaces can contribute to the long carrier lifetime actually observed for the PSCs because they have no midgap surface states. Furthermore, the shallow surface states on the (110) and (001) flat terminations can be efficient intermediates for hole transport to HTMs. Consequently, the formation of the flat terminations under the PbI2-rich condition will be beneficial for the improvement of PSC performance.

Hysteresis in current-voltage curves has been an important issue for conversion efficiency evaluation and development of perovskite solar cells (PSCs). In this study, we explored the ion diffusion effects in tetragonal CH3NH3PbI3 (MAPbI3) and trigonal (NH2)2CHPbI3 (FAPbI3) by first-principles calculations. The calculated activation energies of the anionic and cationic vacancy migrations clearly show that I(-) anions in both MAPbI3 and FAPbI3 can easily diffuse with low barriers of ca. 0.45 eV, comparable to that observed in ion-conducting materials. More interestingly, typical MA(+) cations and larger FA(+) cations both have rather low barriers as well, indicating that the cation molecules can migrate in the perovskite sensitizers when a bias voltage is applied. These results can explain the ion displacement scenario recently proposed by experiments. With the dilute diffusion theory, we discuss that smaller vacancy concentrations (higher crystallinity) and replacement of MA(+) with larger cation molecules will be essential for suppressing hysteresis as well as preventing aging behavior of PSC photosensitizers.

We investigated the termination dependence of structural stability and electronic states of the representative (110), (001), (100), and (101) surfaces of tetragonal CH3NH3PbI3 (MAPbI3), the main component of a perovskite solar cell (PSC), by density functional theory calculations. By examining various types of PbIx polyhedron terminations, we found that a vacant termination is more stable than flat termination on all of the surfaces, under thermodynamic equilibrium conditions of bulk MAPbI3. More interestingly, both terminations can coexist especially on the more probable (110) and (001) surfaces. The electronic structures of the stable vacant and PbI2-rich flat terminations on these two surfaces largely maintain the characteristics of bulk MAPbI3 without midgap states. Thus, these surfaces can contribute to the long carrier lifetime actually observed for the PSCs. Furthermore, the shallow surface states on the (110) and (001) flat terminations can be efficient intermediates of hole transfer. Consequently, the formation of the flat terminations under the PbI2-rich condition will be beneficial for the improvement of PSC performance.