A SiC nanomesh is used as a nanotemplate to direct the epitaxy of C60molecules. The epitaxial growth of C60molecules on SiC nanomesh at room temperature is investigated by in situ scanning tunneling microscopy, revealing a typical Stranski−Krastanov mode (i.e., for the first one or two monolayers, it is a layer-by-layer growth or 2-D nucleation mode; at higher thicknesses, it changes to island growth or a 3-D nucleation mode). At submonolayer (0.04 and 0.2 ML) coverage, C60molecules tend to aggregate to form single-layer C60islands that mainly decorate terrace edges, leaving the uncovered SiC nanomesh almost free of C60molecules. At 1 ML C60coverage, a complete wetting layer of hexagonally close-packed C60molecules forms on top of the SiC nanomesh. At higher coverage from 4.5 ML onward, the C60stacking adopts a (111) oriented face-centered-cubic (fcc) structure. Strong bright and dim molecular contrasts have been observed on the first layer of C60molecules, which are proposed to originate from electronic effects in a single-layer C60island or the different coupling of C60molecules to SiC nanomesh. These STM molecular contrast patterns completely disappear on the second and all the subsequent C60layers. It is also found that the nanomesh can be fully recovered by annealing the C60/SiC nanomesh sample at 200 °C for 20 min. [ABSTRACT FROM AUTHOR]