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Filamentary resistive switching (RS) devices are not only considered as promising building blocks for brain-inspired computing architectures but also realize an unprecedented operation regime where the active device volume reaches truly atomic dimensions. Such atomically sized RS filaments represent the quantum transport regime, where the transmission eigenvalues of the conductance channels are considered a specific device fingerprint. Here, we gain insight into the quantum transmission properties of close-to-atomic-sized RS filaments formed across an insulating Ta2O5 layer through superconducting subgap spectroscopy. This method reveals the transmission density function of the open conduction channels contributing to the device's conductance. Our analysis confirms the formation of truly atomic-sized filaments composed of 3–8 Ta atoms at their narrowest cross-section. We find that this diameter remains unchanged upon RS. Instead, the switching is governed by the redistribution of oxygen vacancies or tantalum cations within the filamentary volume. The set/reset process results in the reduction/formation of an extended barrier at the bottleneck of the filament, which enhances/reduces the transmission of the highly open conduction channels. This transmission variability facilitates neuromorphic electronic applications in nanosized artificial synapses reaching the ultimate atomic scale. [ABSTRACT FROM AUTHOR]

At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a p-n junction perpendicular to the graphene edges can be formed, along which quantum Hall channels copropagate. It has been predicted by Tworzidło and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels copropagating along the p-n interface (equilibration). Here we investigate p-n junctions in encapsulated graphene with a movable p-n interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of e2/h which solely depend on the p-n junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations. [ABSTRACT FROM AUTHOR]

While Fabry-Pérot (FP) resonances and Moiré superlattices are intensively studied in graphene on hexagonal boron nitride (hBN), the two effects have not been discussed in their coexistence. Here we investigate the FP oscillations in a ballistic pnp-junctions in the presence and absence of a Moiré superlattice. First, we address the effect of the smoothness of the confining potential on the visibility of the FP resonances and carefully map the evolution of the FP cavity size as a function of densities inside and outside the cavity in the absence of a superlattice, when the cavity is bound by regular pn-junctions. Using a sample with a Moiré superlattice, we next show that an FP cavity can also be formed by interfaces that mimic a pn-junction but are defined through a satellite Dirac point due to the superlattice. We carefully analyze the FP resonances, which can provide insight into the band-reconstruction due to the superlattice. [ABSTRACT FROM AUTHOR]

Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin-orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten diselenide (WSe 2 ) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.

Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross section on the device conductance, a nanometer-scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamental requirements of neuromorphic computing hardware. However, device engineering lacks the complete quantum characterization of such filamentary conductance. Here we analyze multiple Andreev reflection processes emerging at the filament terminals when superconducting electrodes are utilized. Thereby, the quantum PIN code, i.e., the transmission probabilities of each individual conduction channel contributing to the conductance of the nanojunctions, is revealed. Our measurements on Nb 2 O 5 resistive switching junctions provide profound experimental evidence that the onset of the high conductance ON state is manifested via the formation of truly atomic-sized metallic filaments.

The resistive switching behavior in SiO x -based phase change memory devices confined by few nanometer wide graphene nanogaps is investigated. Our experiments and analysis reveal that the switching dynamics is not only determined by the commonly observed bias voltage dependent set and reset times. We demonstrate that an internal time scale, the dead time, plays a fundamental role in the system's response to various driving signals. We associate the switching behavior with the formation of microscopically distinct SiO x amorphous and crystalline phases between the graphene electrodes. The reset transition is attributed to an amorphization process due to a voltage driven self-heating; it can be triggered at any time by appropriate voltage levels. In contrast, the formation of the crystalline ON state is conditional and only occurs after the completion of a thermally assisted structural rearrangement of the as-quenched OFF state which takes place within the dead time after a reset operation. Our results demonstrate the technological relevance of the dead time rule which enables a zero bias access of both the low and high resistance states of a phase change memory device by unipolar voltage pulses.

In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied. The measurements are supported by tight-binding transport calculations including the full electrostatics of the sample.

The break-junction technique is widely used to measure electronic properties of nanoscale junctions including metal point-contacts and single-molecule junctions. In these measurements, conductance is measured as a function of electrode displacement yielding data that is analyzed by constructing conductance histograms to determine the most frequently observed conductance values in the nanoscale junctions. However much of the rich physics in these measurements is lost in this simple analysis technique. Conductance histograms cannot be used to study the statistical relation of distinct junction configurations, to distinguish structurally different configurations that have similar conductance values, or to obtain information on the relation between conductance and junction elongation. Here, we give a detailed introduction to a novel statistical analysis method based on the two-dimensional cross-correlation histogram (2DCH) analysis of conductance traces and show that this method provides new information about the relation of different junction configurations that occur during the formation and evolution of metal and single-molecule junctions. We first illustrate the different types of correlation effects by using simulated conductance traces. We then apply this analysis method to several different experimental examples. We show from break-junction measurements of different metal point-contacts that in aluminum, the first conductance histogram peak corresponds to two different junction structures. In tantalum, we identify the frequent absence of adhesive instability. We show that conductance plateaus shift in a correlated manner in iron and vanadium junctions. Finally, we highlight the applicability of the correlation analysis to single-molecule platinum-CO-platinum and gold-4,4'-bipyridine-gold junctions.