1. Trion-mediated förster resonance energy transfer and optical gating effect in WS2/hBN/MoSe2 heterojunction
- Author
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Pedro Ludwig Hernandez-Martinez, Kenji Watanabe, Zehua Hu, Hilmi Volkan Demir, Xue Liu, Mohamed Raouf Amara, Takashi Taniguchi, Qihua Xiong, Weijie Zhao, Demir, Hilmi Volkan, and School of Physical and Mathematical Sciences
- Subjects
Free electron model ,Materials science ,Trion ,business.industry ,General Engineering ,Stacking ,Optical spectroscopy ,General Physics and Astronomy ,Heterojunction ,Dielectric ,2D materials ,Photogating ,Transition metal dichalcogenides ,Förster resonance energy transfer ,symbols.namesake ,Förster resonance energy transfer ,symbols ,Optoelectronics ,General Materials Science ,van der Waals force ,Physics::Optics and light [Science] ,business ,Spectroscopy ,van der Waals heterostructure - Abstract
van der Waals two-dimensional layered heterostructures have recently emerged as a platform, where the interlayer couplings give rise to interesting physics and multifunctionalities in optoelectronics. Such couplings can be rationally controlled by dielectric, separation, and stacking angles, which affect the overall charge or energy-transfer processes, and emergent potential landscape for twistronics. Herein, we report the efficient Förster resonance energy transfer (FRET) in WS2/hBN/MoSe2 heterostructure, probed by both steady-state and time-resolved optical spectroscopy. We clarified the evolution behavior of the electron-hole pairs and free electrons from the trions, that is, ∼59.9% of the electron-hole pairs could transfer into MoSe2 by FRET channels (∼38 ps) while the free electrons accumulate at the WS2/hBN interface to photogate MoSe2. This study presents a clear picture of the FRET process in two-dimensional transition-metal dichalcogenides' heterojunctions, which establishes the scientific foundation for developing the related heterojunction optoelectronic devices. Ministry of Education (MOE) National Research Foundation (NRF) Accepted version Q.X. gratefully acknowledges the Singapore Ministry of Education Tier3 Programme “Geometrical Quantum Materials” (MOE2018-T3-1-002), AcRF Tier2 grant (MOE2017-T2-1-040), and Tier1 grant (RG 194/17). Q.X. also acknowledges strong support from Singapore National Research Foundation Competitive Research Programme “Integrated On-chip Planar Coherent Light Sources” (NRF-CRP-21-2018-0007), and National Research Foundation-Agence Nationale de la Recherche (NRF-ANR) Grant (NRF2017-NRF-ANR005 2DCHIRAL). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan, Grant Number JPMXP0112101001, JSPS KAKENHI Grant Numbers JP20H00354 and the CREST(JPMJCR15F3), JST. Author Contributions: Q.X. supervised the research. Z. H. conceived the idea. Z.H. and X.L. prepared the heterostructures. P.H.M. and H.V.D. performed the numerical simulation. Z.H., X.L., and M.R.A. performed the micro-spectroscopy experiments. K.W. and T.T. provided the h-BN bulk crystals. Z.H., X.L., and Q.X. analyzed the data. Z.H. wrote the manuscript with input from all authors.
- Published
- 2020