Search

Enhanced near band gap edge (NBE) emissions of PVA–ZnOnanoparticleswere achieved by employing SiO2–Au core/shell nanostructureswhereas the defect-level emission (DLE) is greatly suppressed. A maximumenhancement of nearly 400% was observed using SiO2–Aufor the emission with optical resonance at 554 nm. SiO2–Au core/shell nanostructures also show a superior tunabilityof resonance energy as compared to that of the pure metal nanoparticles.The enhancement of the NBE emission and suppressed DLE is ascribedto the transfer of the energetic electrons excited by surface plasmonfrom metal nanoparticles to the conduction band of ZnO nanoparticles. [ABSTRACT FROM AUTHOR]

The performance of graphene field-effect transistors is limited by the drastically reduced carrier mobility of graphene on silicon dioxide (SiO2) substrates. Here we demonstrate an ultrasensitive ultraviolet (UV) phototransistor featuring an organic self-assembled monolayer (SAM) sandwiched between an inorganic ZnO quantum dots decorated graphene channel and a conventional SiO2/Si substrate. Remarkably, the room-temperature mobility of the chemical-vapor-deposition grown graphene channel on the SAM is an order-of-magnitude higher than on SiO2, thereby drastically reducing electron transit-time in the channel. The resulting recirculation of electrons (in the graphene channel) within the lifetime of the photogenerated holes (in the ZnO) increases the photoresponsivity and gain of the transistor to ∼10(8) A/W and ∼3 × 10(9), respectively with a UV to visible rejection ratio of ∼10(3). Our UV photodetector device manufacturing is also compatible with current semiconductor processing, and suitable for large volume production.

Organic phase change materials (PCMs) have been utilized as latent heat energy storage and release media for effective thermal management. A major challenge exists for organic PCMs in which their low thermal conductivity leads to a slow transient temperature response and reduced heat transfer efficiency. In this work, 2D thermally annealed defect-free graphene sheets (GSs) can be obtained upon high temperature annealing in removing defects and oxygen functional groups. As a result of greatly reduced phonon scattering centers for thermal transport, the incorporation of ultralight weight and defect free graphene applied as nanoscale additives into a phase change composite (PCC) drastically improve thermal conductivity and meanwhile minimize the reduction of heat of fusion. A high thermal conductivity of the defect-free graphene-PCC can be achieved up to 3.55 W/(m K) at a 10 wt % graphene loading. This represents an enhancement of over 600% as compared to pristine graphene-PCC without annealing at a comparable loading, and a 16-fold enhancement than the pure PCM (1-octadecanol). The defect-free graphene-PCC displays rapid temperature response and superior heat transfer capability as compared to the pristine graphene-PCC or pure PCM, enabling transformational thermal energy storage and management.

An ultraviolet (UV) photodetector is fabricated by sandwiching a nanocomposite active layer between charge-selective semiconducting polymers. The nanocomposite active layer composed of TiO2 nanoparticles (NPs) blended with 1,3-bis(N-carbazolyl)benzene (mCP), which acts as a "valve" controller that enables hole injection into the device upon UV illumination. The UV photodetector demonstrated a high photocurrent to dark current ratio (∼10(4)), a large linear dynamic range of 60 dB, and a remarkable external quantum efficiency (∼8.5 × 10(4)%) for the UV light at 351 nm. In addition to discussing the performance of the UV photodetector, a general strategy for design and fabrication of high-performance UV photodetectors with hole injection operation mode is suggested.

Normal incident photodetection at mid infrared spectral region is achieved using the intersublevel transitions from strain-free GaAs quantum dot pairs in Al(0.3)Ga(0.7)As matrix. The GaAs quantum dot pairs are fabricated by high temperature droplet epitaxy, through which zero strain quantum dot pairs are obtained from lattice matched materials. Photoluminescence, photoluminescence excitation optical spectroscopy, and visible-near-infrared photoconductivity measurement are carried out to study the electronic structure of the photodetector. Due to the intersublevel transitions from GaAs quantum dot pairs, a broadband photoresponse spectrum is observed from 3 to 8 microm with a full width at half-maximum of approximately 2.0 microm.