74 results on '"Wong, H.-S. Philip"'
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2. Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors.
3. Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices.
4. Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry.
5. Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia–Zirconia Alloys.
6. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS2.
7. Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance.
8. Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2.
9. Ultrathin Three-Monolayer Tunneling Memory Selectors.
10. Localized Triggering of the Insulator-Metal Transition in VO2 Using a Single Carbon Nanotube.
11. Gate Quantum Capacitance Effects in Nanoscale Transistors.
12. Fast Spiking of a Mott VO2–Carbon Nanotube Composite Device.
13. Low-Temperature Side Contact to Carbon Nanotube Transistors: Resistance Distributions Down to 10 nm Contact Length.
14. Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors.
15. Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.
16. Removable and Recyclable Conjugated Polymers for Highly Selective and High-Yield Dispersion and Release of Low-Cost Carbon Nanotubes.
17. Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2.
18. A General Design Strategy for Block Copolymer DirectedSelf-Assembly Patterning of Integrated Circuits Contact Holes usingan Alphabet Approach.
19. Cost-Effective, Transfer-Free, Flexible ResistiveRandom Access Memory Using Laser-Scribed Reduced Graphene Oxide PatterningTechnology.
20. Ultrafast Characterization of Phase-Change MaterialCrystallization Properties in the Melt-Quenched Amorphous Phase.
21. Monitoring Oxygen Movementby Raman Spectroscopy ofResistive Random Access Memory with a Graphene-Inserted Electrode.
22. Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing.
23. Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2.
24. Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems.
25. Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS 2 .
26. Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS 2 .
27. Localized Triggering of the Insulator-Metal Transition in VO 2 Using a Single Carbon Nanotube.
28. Fast Spiking of a Mott VO 2 -Carbon Nanotube Composite Device.
29. Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe 2 Transistors.
30. Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.
31. Universal Selective Dispersion of Semiconducting Carbon Nanotubes from Commercial Sources Using a Supramolecular Polymer.
32. Hysteresis-Free Carbon Nanotube Field-Effect Transistors.
33. Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO 2 Layer.
34. Engineering a Large Scale Indium Nanodot Array for Refractive Index Sensing.
35. Distinctive in-Plane Cleavage Behaviors of Two-Dimensional Layered Materials.
36. High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2.
37. High-Performance p-Type Black Phosphorus Transistor with Scandium Contact.
38. Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution.
39. Removable and Recyclable Conjugated Polymers for Highly Selective and High-Yield Dispersion and Release of Low-Cost Carbon Nanotubes.
40. Statistical Study on the Schottky Barrier Reduction of Tunneling Contacts to CVD Synthesized MoS2.
41. Synthesis of Large-Area Highly Crystalline Monolayer Molybdenum Disulfide with Tunable Grain Size in a H2 Atmosphere.
42. Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier.
43. Vertical and Lateral Copper Transport through Graphene Layers.
44. A general design strategy for block copolymer directed self-assembly patterning of integrated circuits contact holes using an alphabet approach.
45. Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems.
46. Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.
47. Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase.
48. Carbon nanotube circuit integration up to sub-20 nm channel lengths.
49. VLSI-compatible carbon nanotube doping technique with low work-function metal oxides.
50. HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.
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