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Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (~0.5 T), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two-dimensional electron gases, and topological insulators and holds relevance for topological superconductivity and quantum computation. [ABSTRACT FROM AUTHOR]

We report on reflection spectra of cesium atoms in close vicinity of a nanostructured metallic meta-surface. We show that the hyperfine sub-Doppler spectrum of the 62S1/2-62P3/2 resonance transition at 852 nm is strongly affected by the coupling to the plasmonic resonance of the nanostructure. Fine tuning of dispersion and positions of the atomic lines in the near-field of plasmonic metamaterials could have uses and implications for atom-based metrology, sensing, and the development of atom-on-a-chip devices. [ABSTRACT FROM AUTHOR]

The ability to control the potential landscape in a medium of interacting particles could lead to intriguing collective behavior and innovative functionalities. Here, we utilize spatially reconfigurable magnetic potentials of a pinwheel artificial-spin-ice (ASI) structure to tailor the motion of superconducting vortices. The reconstituted chain structures of the magnetic charges in the pinwheel ASI and the strong interaction between magnetic charges and superconducting vortices allow significant modification of the transport properties of the underlying superconducting thin film, resulting in a reprogrammable resistance state that enables a reversible and switchable vortex Hall effect. Our results highlight an effective and simple method of using ASI as an in situ reconfigurable nanoscale energy landscape to design reprogrammable superconducting electronics, which could also be applied to the in situ control of properties and functionalities in other magnetic particle systems, such as magnetic skyrmions.

Spin crossover complexes are among the most studied classes of molecular switches and have attracted considerable attention for their potential technological use as active units in multifunctional devices. A fundamental step toward their practical implementation is the integration in macroscopic devices adopting hybrid vertical architectures. First, the physical properties of technological interest shown by these materials in the bulk phase have to be retained once they are deposited on a solid surface. Herein, we describe the study of a hybrid molecular inorganic junction embedding the spin crossover complex [Fe(qnal) 2 ] (qnal = quinoline-naphthaldehyde) as an active switchable thin film sandwiched within energy-optimized metallic electrodes. In these junctions, developed and characterized with the support of state of the art techniques including synchrotron Mössbauer source (SMS) spectroscopy and focused-ion beam scanning transmission electron microscopy, we observed that the spin state conversion of the Fe(II)-based spin crossover film is associated with a transition from a space charge-limited current (SCLC) transport mechanism with shallow traps to a SCLC mechanism characterized by the presence of an exponential distribution of traps concomitant with the spin transition temperature.

In this work, a new type of hybrid energy storage device is constructed by combining the zinc-ion supercapacitor and zinc-air battery in mild electrolyte. Reduced graphene oxide with rich defects, large surface area, and abundant oxygen-containing functional groups is used as active material, which exhibits two kinds of charge storage mechanisms of capacitor and battery simultaneously. Apart from the physical adsorption/desorption of anions on the surface of graphene, the zinc ions in electrolyte will be electrochemically adsorbed/desorbed onto the oxygen-containing groups of graphene during the charge/discharge process, contributing extra capacitance to the device. Moreover, the defects in graphene will further improve the electrochemical performance of the energy storage device via catalyzing the oxygen reduction reaction with exposure to air. Consequently, the synergistic effect leads to a record high capacitance of 370.8 F g -1 at a current density of 0.1 A g -1 , which is higher than that of zinc-ion supercapacitors reported previously. Furthermore, the hybrid device exhibits a superior cycling stability with 94.5% capacitance retention even after 10000 charge/discharge cycles at a high current density of 5 A g -1 . Interestingly, the developed hybrid device can be self-charging automatically after the power is exhausted in the ambient atmosphere. Other electrode materials, such as carbon nanotube paper, are also used to build a hybrid device to verify the feasibility of this strategy. This facile, green, and convenient strategy provides new insight for developing a high performance storage device, showing great application prospect in other hybrid energy storage devices in mild electrolyte.

We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe 2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 10 4 . Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.

A new type of light-emitting hybrid device based on colloidal quantum dots (QDs) and an ionic transition metal complex (iTMC) light-emitting electrochemical cell (LEC) is introduced. The developed hybrid devices show light emission from both active layers, which are combined in a stacked geometry. Time-resolved photoluminescence experiments indicate that the emission is controlled by direct charge injection into both the iTMC and the QD layer. The turn-on time (time to reach 1 cd/m(2)) at constant voltage operation is significantly reduced from 8 min in the case of the reference LEC down to subsecond in the case of the hybrid device. Furthermore, luminance and efficiency of the hybrid device are enhanced compared to reference LEC directly after device turn-on by a factor of 400 and 650, respectively. We attribute these improvements to an increased electron injection efficiency into the iTMC directly after device turn-on.