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Your search keyword '"Ercolani, Daniele"' showing total 20 results
Start Over Author "Ercolani, Daniele" Publisher american chemical society (acs)
20 results on '"Ercolani, Daniele"'

2. Orbital Tuning of Tunnel Coupling in InAs/InP Nanowire Quantum Dots

Author

Sadre Momtaz, Zahra, primary, Servino, Stefano, additional, Demontis, Valeria, additional, Zannier, Valentina, additional, Ercolani, Daniele, additional, Rossi, Francesca, additional, Rossella, Francesco, additional, Sorba, Lucia, additional, Beltram, Fabio, additional, and Roddaro, Stefano, additional

Published
2020
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4. Thermoelectric Conversion at 30 K in InAs/InP Nanowire Quantum Dots

Author

Prete, Domenic, primary, Erdman, Paolo Andrea, additional, Demontis, Valeria, additional, Zannier, Valentina, additional, Ercolani, Daniele, additional, Sorba, Lucia, additional, Beltram, Fabio, additional, Rossella, Francesco, additional, Taddei, Fabio, additional, and Roddaro, Stefano, additional

Published
2019
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8. Gate-Tunable Spatial Modulation of Localized Plasmon Resonances

Author

Arcangeli, Andrea, primary, Rossella, Francesco, additional, Tomadin, Andrea, additional, Xu, Jihua, additional, Ercolani, Daniele, additional, Sorba, Lucia, additional, Beltram, Fabio, additional, Tredicucci, Alessandro, additional, Polini, Marco, additional, and Roddaro, Stefano, additional

Published
2016
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17. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

Author

Kriegner, Dominik, primary, Panse, Christian, additional, Mandl, Bernhard, additional, Dick, Kimberly A., additional, Keplinger, Mario, additional, Persson, Johan M., additional, Caroff, Philippe, additional, Ercolani, Daniele, additional, Sorba, Lucia, additional, Bechstedt, Friedhelm, additional, Stangl, Julian, additional, and Bauer, Günther, additional

Published
2011
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19. Tunable Esaki Effect in Catalyst-Free InAs/GaSb Core–Shell Nanowires

Author

Francesca Rossi, Fabio Beltram, U P Gomes, Stefano Roddaro, Lucia Sorba, Valentina Zannier, Francesco Rossella, Daniele Ercolani, Mirko Rocci, Rocci, Mirko, Rossella, Francesco, Gomes, U. P, Zannier, V, Rossi, F, Ercolani, Daniele, Sorba, Lucia, Beltram, Fabio, and Roddaro, Stefano

Subjects
Nanostructure, Materials science, Bistability, business.industry, Mechanical Engineering, Nanowire, Field effect, Bioengineering, Heterojunction, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Catalysis, Core shell, Band bending, 0103 physical sciences, Optoelectronics, General Materials Science, 010306 general physics, 0210 nano-technology, business
Abstract

We demonstrate tunable bistability and a strong negative differential resistance in InAs/GaSb core-shell nanowire devices embedding a radial broken-gap heterojunction. Nanostructures have been grown using a catalyst-free synthesis on a Si substrate. Current-voltage characteristics display a top peak-to-valley ratio of 4.8 at 4.2 K and 2.2 at room temperature. The Esaki effect can be modulated - or even completely quenched - by field effect, by controlling the band bending profile along the azimuthal angle of the radial heterostructure. Hysteretic behavior is also observed in the presence of a suitable resistive load. Our results indicate that high-quality broken-gap devices can be obtained using Au-free growth.

Published
2016

20. Synthesis of AlAs and AlAs–GaAs Core–Shell Nanowires

Author

Ang 1, 2, Ercolani, Daniele 1, Lugani, Lorenzo 1, Nasi, Lucia 3, Rossi, Francesca 3, Salviati, Giancarlo 3, Beltram, Fabio 1, Sorba, Lucia 1, Li, Ang, Ercolani, Daniele, Lugani, Lorenzo, Lucia, Nasi, Francesca, Rossi, Giancarlo, Salviati, Beltram, Fabio, and Sorba, Lucia

Subjects
Materials science, business.industry, Nanowire, General Chemistry, Partial pressure, QUANTUM DOTS, Condensed Matter Physics, Chemical beam epitaxy, Catalysis, Crystal, Crystallography, chemistry.chemical_compound, Electron diffraction, chemistry, MOLECULAR-BEAM EPITAXY, INAS, Transmission electron microscopy, GROWTH, Optoelectronics, General Materials Science, business, Trimethylaluminium, SEMICONDUCTOR NANOWIRES
Abstract

The growth of free-standing AlAs nanowires on GaAs (111)B substrates by chemical beam epitaxy is presented. Nanowire growth was achieved by employing trimethylaluminium and tertiarybutylarsine as metal-organic precursors and Au as catalyst. Different temperature and group III partial pressure values were examined to investigate the growth mechanism. Furthermore, synthesis of a GaAs shell is proposed as a way to protect the AlAs nanowires from rapid oxidization. In situ reflection high energy electron diffraction analysis and ex situ scanning and transmission electron microscopy studies were performed on both AlAs and AlAs-GaAs core-shell nanowires in order to assess crystal perfection and structure of the nanowires.

Published
2011

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