1. In Situ Reaction Mechanism Studies on Ozone-Based Atomic Layer Deposition of Al2O3 and HfO2
- Author
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Mikko Ritala, Peter Kücher, Jaakko Niinistö, Ingolf Endler, M. Rose, and Johann W. Bartha
- Subjects
In situ ,Ozone ,Materials science ,Inorganic chemistry ,Analytical chemistry ,chemistry.chemical_element ,Hafnium ,Metal ,chemistry.chemical_compound ,Atomic layer deposition ,chemistry ,visual_art ,visual_art.visual_art_medium ,General Materials Science ,Thin film ,Trimethylaluminium ,Quadrupole mass analyzer - Abstract
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor. In addition to released CH(4) and CO(2), water was detected as one of the reaction byproduct in the TMA/O(3) process. In the TEMAH/O(3) process, the surface after the ozone pulse consisted of chemisorpted active oxygen and -OH groups, leading to the release of H(2)O, CO(2), and HNEtMe during the metal precursor pulse.
- Published
- 2010
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