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The reactions of Co2(CO)8 and submicron cobalt particles with Cu(hfac)2 (hfac = hexafluoroacetylacetonate) were studied in toluene. Reactions between these species in the gas phase were studied in a hot-wall, parallel-plate chemical vapor deposition (CVD) reactor. Similar results were obtained with both methods. The overall chemical reactions can be expressed by the following equations: 2Cu(hfac)2 + Co2(CO)6 → 2Cu + 2Co(hfac)2 + 8CO and Cu(hfac)2 + Co → Cu +Co(hfac)2. These results suggested that Co2(CO)8 is not a good source precursor for CVD of Cu−Co binary films when used in conjunction with copper(II) and some copper(I) hexafluoroacetylacetonate compounds and that chemical etching of cobalt metal by Cu(hfac)2 needs to be taken into account when depositing this binary film with copper(I) and copper(II) hexafluoroacetylacetonate compounds as copper source precursors.

Doped group 12 metal sulfides are important materials in the phosphor display industry. Control over the host lattice phase, composition, and dopant concentration is crucial for controlling the luminescence characteristics of these materials. Ternary thin films of CdxZn1-xS and ZnS:Mn were deposited by aerosol-assisted chemical vapor deposition (AACVD) using liquid delivery of toluene solutions of new single-source Zn−S and Cd−S precursors M(SOCC(CH3)3)2TMEDA (M = Cd, Zn; TMEDA = N,N,N,N-tetramethylethylenediamine) and Mn2(CO)10 as a source of Mn. Control over film composition, wherein the precursor solution and film stoichiometries were identical, was achieved by using feed-rate-limited deposition conditions. Films with compositions Cd0.75Zn0.25S, Cd0.50Zn0.50S, and Cd0.25Zn0.75S were deposited at 225 °C from 10 mmol solutions with the same Cd:Zn precursor mole ratios, respectively. A series of control experiments in which the precursor feed rate was varied confirmed the presence of feed-rate-limited fil...

We have examined the formation of copper films alloyed with small quantities of palladium. Independent control studies of palladium and copper deposition from palladium bis(hexafluoroacetylacetonate) [Pd(hfac)2] and (hexafluoroacetylacetonato)copper(I)(vinyltrimethylsilane) [(hfac)Cu(I)(vtms)], both in the presence and absence of H2, were carried out. The growth kinetics for both metals were feed-rate-limited under similar reactor conditions. No significant variation in deposition rate (100 nm/min, Pd; 100−500 nm/min, Cu), morphology, resistivity, and purity of the copper films was observed due to the addition of H2. Simultaneous introduction of both precursors yielded Cu−Pd alloy films. The absence of pure palladium grains was confirmed by X-ray diffraction analysis which showed binary solid solutions (Cu99.5Pd0.5−Cu80Pd20) as the only crystalline phases. Auger electron spectroscopy analysis showed a significant reduction in the palladium content of the films as compared to that expected on the basis of ...

In situ coating of titania aerosol particles with alumina and alumina−silica mixtures by chemical vapor deposition, cluster deposition, and sintering was demonstrated in a hot-wall, continuous flow tubular reactor. Titania particles with diameters in the range 0.2−0.8 μm were produced by the reaction of TiCl4 with O2 at 1300 and 1500 °C and were passed through a coating region where they were mixed with AlCl3 or mixtures of AlCl3 and SiCl4. Uniform and dense coatings of Al2O3 were obtained at both 1300 and 1500 °C using AlCl3 inlet concentrations that corresponded to Al2O3 mass loading of less than 1 wt %. The coating thickness could be controlled from 5 to 20 nm which corresponded to deposition rates up to 50 nm/s. Uniform and dense coatings of Al2O3/SiO2 were obtained at 1300 °C when the SiO2/Al2O3 weight ratio was less than 2:1. It is proposed that coating takes place in two modes: (a) chemical vapor deposition of AlCl3 and SiCl4 on the particle surface and (b) gas-phase reactions of the metal chlorid...

The CVD of Cu using (hfac)Cu(VTMS) (hfac = hexafluoroacetylacetonate, VTMS = vinyltrimethylsilane) and (hfac)Cu(2-butyne) in the presence of water and other reagents has been studied. The overall C...

The volatile copper(I) complexes (β-diketonate)Cu(PMe 3 ) n where β-diketonate=hexafluoroacetylacetonate (hfac), trifluoroacetylacetonate (tfac), and acetylacetonate (acac) for n=1 and 2 and β-diketonate=dipivaloylmethanate (dpm) and dibenzoylmethanate (dbm) for n=1 have been prepared in high yield. These species have been characterized by spectroscopy,by elemental analysis and by single-crystal X-ray diffraction

On etudie la production d'aerosol de butanolate d'aluminium secondaire, precurseur de poudres ceramiques d'alumine, par condensation de vapeur sur des germes cristallins dans un ecoulement laminaire

On etudie l'effet du melange des gaz reactifs sur le comportement d'un reacteur a ecoulement aerosol tubulaire. On utilise des tetes de melange a jet simple ou a jets multiples pour former un aerosol de nitrate d'ammonium a partir d'un melange d'ammoniaque et d'acide nitrique. Le systeme reagit comme un reacteur bien agite suivi d'un reacteur a ecoulement laminaire. On observe un seuil de saturation critique pour lequel la formation des particules est ou n'est pas controlee par le melangeage des reactifs