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Your search keyword '"Ruthenium -- Atomic properties"' showing total 3 results
Start Over Descriptor "Ruthenium -- Atomic properties" Publisher american institute of physics, inc.
3 results on '"Ruthenium -- Atomic properties"'

1. In situ energy dispersive X-ray reflectometry to investigate the (RuPc)(sub 2)/NO(sub x) interaction process evidenced by ex situ measurements

Author

Generosi, Amanda, Rossi Albertini, Valerio, Paci, Barabara, Perfetti, Paolo, Caminiti, Ruggero, Paoletti, Anna M., Pennesi, Gianna, and Rossi, Gentilina

Subjects
Ruthenium -- Atomic properties, Phthalocyanins -- Atomic properties, Nitric oxide -- Atomic properties, Physics
Abstract

A systematic energy dispersive X-ray reflectometry study of different ruthenium phtalocyanine (RuPc)(sub 2) thin films was performed in order to investigate their reactivity with the oxidizing NO(sub x) gas. A preliminary ex situ analysis, consisting of the comparison between the morphological parameters of different films, before and after the exposure to the gas, was performed.

Published
2006

2. Asperity contacts at the nanoscale: comparison of Ru and Au

Author

Fortini, Andrea, Mendelev, Mikhail I., Buldyrev, Sergey, and Srolovitz, David

Subjects
Gold -- Electric properties, Gold -- Atomic properties, Molecular dynamics -- Usage, Ruthenium -- Electric properties, Ruthenium -- Atomic properties, Physics
Abstract

An interatomic potential is developed and validated for ruthenium based on the embedded atom method framework with the Finnis/Sinclair representation. The studies have compared how asperity contacts form and separate in gold and in ruthenium.

Published
2008

3. Nucleation kinetics of Ru on the silicon oxide and silicon nitride surfaces deposited by atomic layer deposition

Author

Sung-Soo Yim, Do-Joong Lee, Ki-Su Kim, Soo-Hyun Kim, Tae-Sik Yoon, and Ki-Bum Kim

Subjects
Ruthenium -- Atomic properties, Ruthenium -- Chemical properties, Silicon compounds -- Atomic properties, Silicon compounds -- Chemical properties, Silicon nitride -- Atomic properties, Silicon nitride -- Chemical properties, Physics
Abstract

The nucleation behavior of Ru deposited by atomic layer deposition (ALD) by using bis(ethylcyclopentadienyl)ruthenium precursor and [O.sub.2] reactant is examined as a function of the number of ALD cycles. A theoretical model of the nucleation kinetics in ALD is developed by considering the precursor adsorption and the surface diffusion of the deposited atom.

Published
2008

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