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Hot filament chemical vapor deposition (CVD) system is investigated by using two dimensional reactive flow simulations. Simulation of the reactive flow system of an advanced CVD technique is affected by the reduction in the velocity of gas surrounding the filament. In the Ch4-H2 hot filament system, CH3 is a growth species.

An advanced hot-filament chemical vapor deposition method enables the accurate control of the substrate temperature, independent of other chemical vapors deposition parameters. This method is used in the growth of homoepitaxial (111), (110) and (100) diamond films, which are examined by optical microscopy and reflection high energy electron diffraction (RHEED). The deposition pressure, methane concentration in the feed gas and substrate temperature affect the surface morphology of the films. Atomically smooth surfaces were found on (111) substrates and (100) substrates at varying pressures and levels of methane concentration. Spotty patterns were found on the (110) substrates due to three-dimensional growth.

The behavior of the RD spectra of the Si(001) surface during the layer-by-layer oxidation is reported. The report revealed that the half period oscillation corresponds to the oxidation of 1 ML, which demonstrates the possibility of in situ counting and control of the number of oxidized layers.