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The authors describe a remote plasma atomic layer deposition reactor (Oxford Instruments FlexAL™) that includes an inductively coupled plasma source and a load lock capable of handling substrates up to 200 mm in diameter. The deposition of titanium nitride (TiN) and hafnium oxide (HfO2) is described for the combination of the metal-halide precursor TiCl4 and H2–N2 plasma and the combination of the metallorganic precursor Hf[N(CH3)(C2H5)]4 and O2 plasma, respectively. The influence of the plasma exposure time and substrate temperature has been studied and compositional, structural, and electrical properties are reported. TiN films with a low Cl impurity content were obtained at 350 °C at a growth rate of 0.35 Å/cycle with an electrical resistivity as low as 150 μΩ cm. Carbon-free (detection limit <2 at. %) HfO2 films were obtained at a growth rate of 1.0 Å/cycle at 290 °C. The thickness and resisitivity nonuniformity was <5% for the TiN and the thickness uniformality was <2% for the HfO2 films as determined over 200 mm wafers. [ABSTRACT FROM AUTHOR]