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This work establishes a connection between canonical perturbation series in quantum mechanics and a Kato expansion for the resolvent of the Liouville superoperator. Our approach leads to an explicit expression for a generator of a block-diagonalizing Dyson's ordered exponential in arbitrary perturbation order. Unitary intertwining of perturbed and unperturbed averaging superprojectors allows for a description of ambiguities in the generator and block-diagonalized Hamiltonian. We compare the efficiency of the corresponding computational algorithm with the efficiencies of the Van Vleck and Magnus methods for high perturbative orders. [ABSTRACT FROM AUTHOR]

Films of Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on bulk heavily B-doped (001)-oriented diamond substrates using thin interlayers of Al2O3 deposited by HVPE or AlN/AlGaN deposited by metalorganic chemical vapor deposition. The growth with AlN/AlGaN was dominated by the formation of a highly conducting ɛ-phase with poor crystalline quality. For these samples, excessive leakage of Schottky diodes and of the Ga2O3/diamond heterojunction prevented meaningful electrical characterization. The film grown with the Al2O3 interlayer was mainly composed of (−201) β-Ga2O3 with an admixture of the ɛ-phase. The film had a low density of residual shallow donors, 5 × 1015 cm−3, with deep electron traps spectra consisting of the well documented centers for β-Ga2O3 near Ec 0.27, Ec 0.7, and Ec 1 eV, all of which are often ascribed to native defects or their complexes. The electrical properties of heterojunctions were mostly determined by the properties of the Ga2O3 films. Both Schottky diodes and heterojunctions showed measurable photosensitivity for 259 nm wavelength excitation, but very low photocurrent for near-UV (365 nm wavelength excitation). [ABSTRACT FROM AUTHOR]

Densities of a- and a+c-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films. [ABSTRACT FROM AUTHOR]