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We have investigated deep level centers in n-type and semi-insulating (SI) 4H-SiC epitaxial layers by thermally stimulated current (TSC) spectroscopy. The epitaxial layers were grown using chemical vapor deposition utilizing a dichlorosilane precursor. Both epitaxial layers exhibited relatively shallow levels related to Al, B, L- and D-centers. A deep level center with an activation energy of 1.1 eV, peaked at ∼400 K, was detected in the n-type epitaxial layer and correlated with the IL2 level and the 1.1 eV center in a high purity bulk SI 4H-SiC. The TSC spectra of the SI epitaxial layer was dominated by the peaks at 525-585 K that we attributed to intrinsic defects and their complexes with energy levels close to the middle of the bandgap. The TSC spectra of SI epitaxial layer exhibited peaks with different current polarity which is explained by thermoelectric effect and the built-in electric field reversal. The results of the transfer length method measurements of the SI epitaxial layer and the room temperature current-voltage (I-V) characteristics of both epitaxial layers are also reported. [ABSTRACT FROM AUTHOR]

Focuses on a study which investigated the effect of the incorporation of sodium into bismuth-doped lutetium iron garnet lattice on the magnetic and magneto-optical properties of the lattice. Theoretical background of the study; Experimental procedures; Results and discussion.

Reports on the film composition and growth conditions which may be used to produce films with nearly isotropic propagation margins which support submicrometer bubble domains. Description of the development of the isotropic magnetostrictive films; Film growth and characterization; Conclusion.

Presents a study that investigated domain mode ferromagnetic resonance (DMFMR) in bismuth-substituted magnetic garnet films. Description of the DMFMR theory; Preparation of samples used in the experiment; Theoretical values for the zero-field domain wall resonance.

Provides information on a study that observed interactions between the domain wall resonance mode and the domain ferromagnetic resonance modes for the first time in unsaturated gallium- and lanthanum-doped thin yttrium iron garnet films. Experimental observations; Results and discussion on the study; Conclusion.

We have investigated temperature dependence (94 K-650 K) of current conduction in semi-insulating 4H-SiC epitaxial layer. The epitaxial layer was grown on highly doped n-type (0001) 4H-SiC substrate using chemical vapor deposition with dichlorosilane precursor. The current-voltage (I-V) characteristics exhibited steps at ∼1 V and ∼70 V that were attributed to the filling of deep level centers by injected electrons. Correlation of the I-V characteristics with the results of thermally stimulated current measurements showed that deep centers peaked at 242 K, 285 K, and 500 K, were responsible for the steps in the I-V characteristics. Slow processes of the injected carrier capture on traps resulted in the I-V characteristic with negative differential resistance. [ABSTRACT FROM AUTHOR]

Detector grade Cd0.9Zn0.1Te (CZT) single crystals were grown from zone refined Cd, Zn, and Te (∼7 N) precursor materials, using a tellurium solvent method. Detectors with virtual Frisch grid configuration were fabricated using these crystals. I-V measurements revealed low leakage currents at room-temperature, ∼11 nA for one such detector D1 and ∼8 nA for another detector D2 at 1100 V. The spectroscopic performances of the two CZT virtual Frisch grid detectors have been evaluated and compared for high energy gamma ray detection. Detector D1 showed a well-resolved pulse-height spectrum with an energy resolution of ∼1.6% for the 662 keV gamma rays. Detector D2 also showed a distinct 662 keV peak but with a broader pulse-height distribution. A digital biparametric correlation study of the depth of interaction and energy deposited by the 662 keV gamma rays was carried out. A different kind of correlation pattern from that observed normally for hole trapping was noticed in the case of detector D2. Correlation of results from thermally stimulated current measurement studies suggested that the anomalous biparametric correlation pattern was due to the trapping of holes but modified by the virtual Frisch grid effect. The results also suggested that the effect of electron trapping could not be ruled out either. Finally, a digital correction scheme was applied to recover the 137Cs spectrum from the effect of charge loss. [ABSTRACT FROM AUTHOR]