1. Large thermopower in the antiferromagnetic semiconductor BaMn2Bi2.
- Author
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Wang, Kefeng and Petrovic, C.
- Subjects
- *
THERMOELECTRIC power , *ANTIFERROMAGNETIC materials , *SEMICONDUCTOR materials , *TRANSITION temperature , *MAGNETIC fields - Abstract
We report electrical and thermal transport properties of Mn-based material BaMn2Bi2 with ThCr2Si2 structure. The resistivity of the antiferromagnetic BaMn2Bi2 shows a metal-semiconductor transition at ∼80 K with decreasing temperature. Correspondingly, the thermopower S shows a peak at the same temperature, approaching 150 μV/K. With increasing temperature, S decreases to about 125 μV/K at the room temperature. The magnetic field enhances the peak value to 210 μV/K. The Hall resistivity reveals an abrupt change of the carrier density close to the metal-semiconductor transition temperature. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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