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Presents information on a study that examined the growth and microstructure of α-Si:H/α-SiN [subx] :H heterojunctions. Experimental details; Results and discussion on the study; Conclusions.

Presents the results of the application of photoresponse techniques to the study of the transport of electrons past an energy barrier. Investigations of electron transport through gallium arsenide/aluminum arsenide heterostructures; Model for the absorption of the light in the structures used; Change in the band gap as compared to the shift in the peak position in the voltage spectrum of the second sample.

The dielectric functions of 0.5–1.5-μm-thick Zn1-xCdxSe (0≤x≤0.34) epilayers on (100) GaAs were measured by spectroellipsometry (SE) over the photon energy range 1.5≤E≤5.3 eV. These spectra were parameterized using the Sellmeier and Lorentz equations for photon energies below and above the fundamental gap region, respectively. We have demonstrated the usefulness of this parameterization in analyses of SE data collected on a ZnSe heterostructure and a Zn1-xCdxSe quantum well that provide accurate layer thicknesses and compositions. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We report the first observations of resonant tunneling in electronic transport perpendicular to two AlAs layers separated by a GaAs quantum well in GaAs/AlAs heterostructures grown by metalorganic chemical vapor deposition. Resonant tunneling can be observed as inflections in the 1-V curves at room temperature. These inflections become more pronounced as the temperature is reduced, until negative differential resistance regions become visible for temperatures below 260 K. At low temperatures, the I-V curves not only reveal two large negative resistance regions corresponding to the first energy level in the GaAs quantum well but also a structure which shows evidence of resonant tunneling through the second and possibly the third energy states in the well. Second derivative (d²1/dV²) measurements confirm the existence of the resonances seen in the I-V curves. [ABSTRACT FROM AUTHOR]