1. Resonance Raman mapping as a tool to monitor and manipulate Si nanocrystals in Si-SiO2 nanocomposite.
- Author
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Rani, Ekta, Ingale, Alka A., Chaturvedi, A., Joshi, M. P., and Kukreja, L. M.
- Subjects
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RESONANCE Raman effect , *NANOSILICON , *SILICON oxide , *NANOPARTICLE synthesis , *PHONON scattering - Abstract
Specially designed laser heating experiment along with Raman mapping on Si-SiO2 nanocomposites elucidates the contribution of core and surface/interface in the intermediate frequency range (511-514 cm-1) Si phonons. The contribution of core to surface/interface increases with the size of Si nanocrystal, which itself increases on laser irradiation. Further, it is found that resonance Raman is crucial to the observance of surface/interface phonons and wavelength dependent Raman mapping can be corroborated with band edges observed in absorption spectra. This understanding can be gainfully used to manipulate and characterize Si-SiO2 nanocomposite, simultaneously for photovoltaic device applications. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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