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An efficient visible-light photoelectrochemical photodetector based on a compact In-rich n-InGaN layer activated by p-Cu2O microcrystals operating as photoanode in the self-powered mode is demonstrated. The photocurrent density of 80 µA/cm2 under one-sun illumination is more than 10 times larger than that of a bare InGaN layer. Moreover, the photocurrent density, responsivity of 0.8 mA/W, specific detectivity of 4 × 109 Jones, and response times of 5–8 ms are more than five times better compared to those of our previously reported nanowire counterpart. The excellent performance is attributed to maximized photocarrier separation in the built-in electric field of the internal p–n junction for fully depleted Cu2O microcrystals with maximized height and the planar geometry, guaranteeing unhindered diffusion of the electrolyte to and from the photoanode surface. [ABSTRACT FROM AUTHOR]

We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor deposition method. A thin transition layer (∼4 nm) mainly composed of polycrystalline germanium at the MoTe2/Ge interface was verified during the Ge flake growth. The MoTe2/Ge heterojunction-based photodetector exhibits both the response speed with a rise/fall time of 7/4 μs and the photoresponsivity and detectivity with 4.87 A W−1 and 5.02 × 1011 Jones under zero bias in the near-infrared regime, respectively. The characteristics of device performance imply its practical applicability as building block for potential near-infrared integrated photonics. [ABSTRACT FROM AUTHOR]