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Your search keyword '"Rummukainen, M."' showing total 1 results
Start Over Author "Rummukainen, M." Topic silicon carbide Publisher american institute of physics

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1 results on '"Rummukainen, M."'

1. Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition.

Author

Tengborn, E., Rummukainen, M., Tuomisto, F., Saarinen, K., Rudzinski, M., Hageman, P. R., Larsen, P. K., and Nordlund, A.

Subjects
*GALLIUM nitride, *METAL organic chemical vapor deposition, *SILICON carbide, *POSITRON annihilation, *SPECTRUM analysis
Abstract

Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation. [ABSTRACT FROM AUTHOR]

Published
2006
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