1. Extraction of interface trap density by analyzing organohalide perovskite and metal contacts using device simulation.
- Author
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Shim, Hayeon and Kwon, Yongwoo
- Subjects
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METALWORK , *CURRENT-voltage curves , *ELECTRON work function , *FERMI level , *DENSITY , *CESIUM compounds - Abstract
We estimated the interface trap density by examining methylamine-lead-iodide (MALI, CH3NH3PbI3) and metal contacts. We analyzed experimental current-voltage curves from two MALI-based resistive memory devices, which are Au/MALI/indium-tin-oxide and Ag/MALI/Pt, using a device simulator. We obtained effective work functions (EWFs) for MALI/metal contacts by considering Fermi level pinning attributed to the interface states comprising metal-induced gap states (MIGSs) and interface traps. Through our theoretical consideration, we concluded that the interface trap density is about 1015 eV−1 cm−2 at MALI/metal contacts because the low MIGS density of about 1013 eV−1 cm−2 obtained from a theoretical equation makes little contribution to the interface state density of 1015 eV−1 cm−2 obtained from the linear fitting between the metal work functions and the EWFs. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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