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In this article, we combine diffuse x-ray scattering with a Monte Carlo simulation method for the determination of the dislocation density in thin heteroepitaxial layers. As a model, we consider GaN epitaxial layers containing threading dislocations perpendicular to the surface. The densities of particular types of threading dislocations following from the comparison of measured and simulated distributions of diffusely scattered x-ray intensity are compared with the dislocation densities determined by etching. A good agreement was found. [ABSTRACT FROM AUTHOR]

An x-ray diffuse scattering investigation of p-type porous silicon (PS) is reported. Synchrotron radiation and laboratory measurements of the x-ray diffuse scattering at small and large scattering wave-vector q values are presented. At small q values and for p[sup -] -type material, small isotropic crystallites of a few nanometers diameter are shown, whereas for p[sup +]-type material the main cylindrical crystallites are larger. At large q values the fine p[sup +] PS structure is investigated and reveals the presence of small spherical crystallites around the main cylindrical crystallites. The elastic relaxation of silicon crystallites in the porous structure is also presented for oxidized and for as-formed samples, using reciprocal space maps. PS superlattice diffuse scattering is then observed. Finally, these results are discussed in relation to previous x-ray studies and other methods of structural observation. [ABSTRACT FROM AUTHOR]

Presents information on a study of how the strain relaxation of the multilayer grating evolves toward the free surface and how the local strain distribution is modulated due to the compositional profile of the layered setup. Experimental details; Fit of the experimental results; Conclusions.

Presents information on a study which investigated the vertical variation of in-plane strain induced by an InGaAs single quantum well which is embedded in a free-standing wire structure using x-ray grazing incidence diffraction. Experimental details; Theory and discussion; Conclusions.

Looks at a study which investigated the thin p- and p+ type of the porous silicon layers, using high resolution x-ray diffraction. Exhibition of the porous material's properties, with reference to the single crystal; In-depth look at the multilayers of the porous silicon; Methodology used to conduct the study; Results of the study.

Presents a study which examined the growth of Y[sub2]Co[sub17](0001) thin films on W(110) by pulsed laser deposition. Function of substrate temperature and thickness; Factors considered in the observation of different growth modes; Overview of the crystal structure of the R[sub2]Co[sub17] compounds.

Synchrotron radiation laminography with X-ray diffraction contrast enables three-dimensional imaging of dislocations in monocrystalline wafers. We outline the principle of the technique, the required experimental conditions, and the reconstruction procedure. The feasibility and the potential of the method are demonstrated by three-dimensional imaging of dislocation loops in an indent-damaged and annealed silicon wafer. [ABSTRACT FROM AUTHOR]

A portable synchrotron molecular beam epitaxy (MBE) system is designed and applied for in situ investigations. The growth chamber is equipped with all the standard MBE components such as effusion cells with shutters, main shutter, cooling shroud, manipulator, reflection high energy electron diffraction setup, and pressure gauges. The characteristic feature of the system is the beryllium windows which are used for in situ x-ray measurements. An UHV sample transfer case allows in vacuo transfer of samples prepared elsewhere. We describe the system design and demonstrate its performance by investigating the annealing process of buried InGaAs self-organized quantum dots. [ABSTRACT FROM AUTHOR]

Hard x rays from a synchrotron source are used in this implementation of computed laminography for three-dimensional (3D) imaging of flat, laterally extended objects. Due to outstanding properties of synchrotron light, high spatial resolution down to the micrometer scale can be attained, even for specimens having lateral dimensions of several decimeters. Operating either with a monochromatic or with a white synchrotron beam, the method can be optimized to attain high sensitivity or considerable inspection throughput in synchrotron user and small-batch industrial experiments. The article describes the details of experimental setups, alignment procedures, and the underlying reconstruction principles. Imaging of interconnections in flip-chip and wire-bonded devices illustrates the peculiarities of the method compared to its alternatives and demonstrates the wide application potential for the 3D inspection and quality assessment in microsystem technology. [ABSTRACT FROM AUTHOR]

We used high-resolution x-ray reciprocal space mapping in noncoplanar grazing-incidence geometry for the determination of the density of edge threading dislocations in c-oriented GaN epitaxial layers and we compared the measured intensity distributions with results of numerical Monte Carlo simulations of diffuse scattering. We demonstrated that a combination of diffraction data taken in coplanar symmetric and noncoplanar grazing-incidence geometries makes it possible to obtain the densities of screw and edge threading dislocations. [ABSTRACT FROM AUTHOR]

Space-resolved x-ray diffraction measurements of gradient-etched CuIn1-xGaxSe2 (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter of CIGS layer growth dynamics, the absorber thickness-dependent stress in the molybdenum back contact, is analyzed. Texturing of grains and quality of the polycrystalline absorber layer are correlated with the intentional composition gradients (band gap grading). The band gap gradient is determined by space-resolved photoluminescence measurements and correlated with composition and strain profiles. [ABSTRACT FROM AUTHOR]

The effect of postgrowth annealing on shape and ordering of a single layer of InGaAs/GaAs(001) quantum dots is investigated by three dimensional grazing incidence small angle x-ray scattering. A transition from disordered dots to two-dimensional lateral ordering is found. This transition is accompanying a quantum dot shape transformation. Grazing incidence diffraction measurements relate the observed ordering type to strain driven self organization. The role of different growth conditions leading to lateral correlation is discussed by comparing the results to recent experimental achievements in the field. [ABSTRACT FROM AUTHOR]

In-line phase contrast is combined with laminography to image in three dimensions regions of interest in laterally extended flat specimens of weak absorption contrast. The principle of the method and a theoretical description of the imaging process are outlined. The present instrumental implementation enables reconstructing nondestructively the internal structure at different lateral specimen positions with micron resolution. The feasibility and application potential are demonstrated for both phase-contrast and holographic (i.e., using phase retrieval) laminography by the three-dimensional imaging of fuel-cell diffusion layers. [ABSTRACT FROM AUTHOR]

Rupture of an individual film in an evolving liquid metal foam is investigated by means of high-speed x-ray radioscopy using white synchrotron radiation. At a frame rate of 5000 frames/s, the rupture event is spread over three to four images. The images show that the remnants of the rupturing film are pulled into the surrounding plateau borders in 600±100 μs which conforms well with a liquid movement governed by inertia and not by viscosity. Within one order of magnitude, the viscosity of the liquid involved must be similar to the viscosity of pure liquid aluminium. [ABSTRACT FROM AUTHOR]

Synchrotron-radiation tomography was used to investigate early foaming stages of aluminium alloys. Monochromatic radiation, high spatial resolution down to the micrometer scale, partial beam coherence, and holographic reconstruction techniques permit the distinction between different foam constituents which are not visible by other volume imaging techniques. In combination with three-dimensional image analysis, the differences in the pore initiation processes in two different aluminium alloys are shown. We find that, in powder compacts made from prealloyed AA6061 alloy powder, pores appear predominantly around the blowing agent particles whereas, in compacts made from a powder blend of Al and Si, pores tend to initiate around Si particles. [ABSTRACT FROM AUTHOR]

Computed laminography with synchrotron radiation is developed and carried out for three-dimensional imaging of flat, laterally extended objects with high spatial resolution. Particular experimental conditions of a stationary synchrotron source have been taken into account by a scanning geometry different from that employed with movable conventional laboratory x-ray sources. Depending on the mechanical precision of the sample manipulation system, high spatial resolution down to the scale of 1 μm can be attained nondestructively, even for objects of large lateral size. Furthermore, high beam intensity and the parallel-beam geometry enables easy use of monochromatic radiation for optimizing contrast and reducing imaging artifacts. Simulations and experiments on a test object demonstrate the feasibility of the method. Application to the inspection of solder joints in a flip-chip bonded device shows the potential for quality assurance of microsystem devices. [ABSTRACT FROM AUTHOR]

The depth dependent strain relaxation in photolithographically defined and reactive ion etched Si/SiGe quantum wire and dot arrays is determined by high resolution grazing incidence x-ray diffraction. The laterally periodic structures were aligned along two orthogonal [110] and [1¯10] directions on the (001) surface. By recording reciprocal space maps around the (220) and (2¯20) reciprocal lattice points, the shape and in-plane strain could be determined independently of each other. Using triple axis diffractometry and changing the effective penetration depth of the x-ray radiation between 5 and 300 nm the strain relaxation in the wires and dots could be determined depth resolved. © 1998 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Examines the x-ray diffraction reciprocal space mapping of GaAs surface grating. Cross pattern of satellite rods and grating transmission substrate reflection resonance peaks; Diffraction features of monocrystalline semiconductor grating with periodicity of 574 nanometer.