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We report measurements of thermal conductivity κ on individual gallium nitride nanowires (GaN NWs) with diameters ranging from 97 to 181 nm grown by thermal chemical vapor deposition. We observed unexpectedly small κ values, in the range of 13–19 W/m K at 300 K, with very weak diameter dependence. We also observe unusual power law κ∼Tn behavior with n=1.8 at low temperature. Electron-energy-loss-spectroscopy measurements indicate Si and O concentrations in the ranges of 0.1–1 and 0.01–0.1 at. %, respectively. Based on extensive numerical calculations, we conclude that both the unexpectedly low κ and the T1.8 dependence are caused by unusually large mass-difference scattering, primarily from Si impurities. Our analysis also suggests that mass-difference scattering rates are significantly enhanced by the reduced phonon group velocity in nanoscale systems. Planar defects running the length of the NW, previously characterized in detail, may also play a role in limiting the phonon mean free path. [ABSTRACT FROM AUTHOR]

This paper describes the design and construction of a compact, “user-friendly” polarization-modulation infrared reflection absorption spectroscopy (PM-IRRAS) instrument at the Center for Functional Nanomaterials (CFN) of Brookhaven National Laboratory, which allows studying surfaces at pressures ranging from ultra-high vacuum to 100 Torr. Surface infrared spectroscopy is ideally suited for studying these processes as the vibrational frequencies of the IR chromophores are sensitive to the nature of the bonding environment on the surface. Relying on the surface selection rules, by modulating the polarization of incident light, it is possible to separate the contributions from the isotropic gas or solution phase, from the surface bound species. A spectral frequency range between 1000 cm -1 and 4000 cm -1 can be acquired. While typical spectra with a good signal to noise ratio can be obtained at elevated pressures of gases in ~2 min at 4 cm -1 resolution, we have also acquired higher resolution spectra at 0.25 cm -1 with longer acquisition times. By way of verification, CO uptake on a heavily oxidized Ru(0001) sample was studied. As part of this test study, the presence of CO adsorbed on Ru bridge sites was confirmed, in agreement with previous ambient pressure X ray photoelectron spectroscopy studies. In terms of instrument performance, it was also determined that the gas phase contribution from CO could be completely removed even up to pressures close to 100 Torr. A second test study demonstrated the use of the technique for studying morphological properties of a spin coated polymer on a conductive surface. Note that this is a novel application of this technique. In this experiment, the polarization of incident light was modulated manually (vs. through a photoelastic modulator). It was demonstrated, in good agreement with the literature, that the polymer chains preferentially lie parallel with the surface. This PM-IRRAS system is small, modular, and easily reconfigurable. It also features a “vacuum suitcase” that allows for the integration of the PM-IRRAS system with the rest of the suite of instrumentation at our laboratory available to external users through the CFN user proposal system. [ABSTRACT FROM AUTHOR]

We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500% increase in the photocurrent response compared with the starting SnS2-only FET device and a spectral responsivity reaching over 650 A/W at 400 nm wavelength. The negligible electrical conductance in a control QD-only FET device suggests that the energy transfer between QDs and SnS2 is the main mechanism responsible for the sensitization effect, which is consistent with the strong spectral overlap between QD photoluminescence and SnS2 optical absorption as well as the large nominal donor-acceptor interspacing between QD core and SnS2. We also find enhanced charge carrier mobility in hybrid QD-SnS2 FETs which we attribute to a reduced contact Schottky barrier width due to an elevated background charge carrier density. [ABSTRACT FROM AUTHOR]

We investigate the electrical and structural properties of infiltration-synthesized ZnO. In-plane ZnO nanowire arrays with prescribed positional registrations are generated by infiltrating diethlyzinc and water vapor into lithographically defined SU-8 polymer templates and removing organic matrix by oxygen plasma ashing. Transmission electron microscopy reveals that homogeneously amorphous as-infiltrated polymer templates transform into highly nanocrystalline ZnO upon removal of organic matrix. Field-effect transistor device measurements show that the synthesized ZnO after thermal annealing displays a typical n-type behavior, ~1019cm-3 carrier density, and ~0.1 cm2 V-1 s-1 electron mobility, reflecting highly nanocrystalline internal structure. The results demonstrate the potential application of infiltration synthesis in fabricating metal oxide electronic devices. [ABSTRACT FROM AUTHOR]

Nanopatterning high aspect-ratio metal oxide structures remains challenging for conventional nanofabrication methods based on reactive ion etching due to marginal etch selectivity between target oxides and typical mask materials. Here, the authors report the application of sequential infiltration synthesis (SIS) on lithographically defined SU-8 polymer templates for patterning arbitrarily designed, high aspect-ratio metal oxide nanostructures with sub-50 nm linewidths, smooth vertical profiles, and three-dimensional (3D) morphologies difficult to achieve by the conventional fabrication methods. As examples, various AlOx nanostructures with ∼40 nm linewidths and up to 16 aspect ratios were demonstrated, along with TiOx in-plane nanowire arrays of controlled positional registrations. Detailed scanning and transmission electron microscopy studies revealed nanocrystalline and amorphous internal structures of respective AlOx and TiOx, as well as the swelling and contraction behaviors of polymer templates during the SIS process, which allowed the facile fabrication of high aspect-ratio, sub-50 nm-featured oxide nanopatterns with 3D morphologies. These results confirm the potential of vapor-phase material infiltration in directly nanopatterning complexly structured metal oxides. [ABSTRACT FROM AUTHOR]

We have grown single-crystal (Ga1-xZnx)(N1-xOx) solid-solution nanowires using nanostructured ZnGa2O4 precursor prepared by a sol-gel method. From electrical transport measurements in individual nanowire field-effect transistors, we have identified the conduction as n-type and obtained a background carrier density (∼1019 cm-3) and an electron mobility (∼1 cm2/V s) that are consistent with chemical disorder and a large number of charge traps, as confirmed by the devices’ photocurrent response. From the dependence of the device photoresponse on incident light wavelength, we have determined the energy band gap of (Ga0.88Zn0.12)(N0.88O0.12) to be as much as ∼0.6 eV lower than that of GaN or ZnO. [ABSTRACT FROM AUTHOR]